Výsledky vyhledávání - "and I. Vickridge"

Akademický článek

Determination and benchmarking of 27Al(d,α) and 27Al(d,p) reaction cross sections for energies and angles relevant to NRA

Autor: M. Salimi, O. Kakuee, S. F. Masoudi, H. Rafi-kheiri, E. Briand, J.-J. Ganem, I. Vickridge

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-19 (2021)

Abstract The cross-sections of deuteron-induced nuclear reactions suitable for ion beam analysis, measured in different laboratories, are often significantly different. In the present work, differential cross-sections of 27Al(d,p) and 27Al(d,α) reac

Externí odkaz: https://doaj.org/article/9e970419ed294dd99f4d49ee483a51f4

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Akademický článek

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Autor: G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan

Publikováno v: AIP Advances, Vol 4, Iss 12, Pp 127101-127101-13 (2014)

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal

Externí odkaz: https://doaj.org/article/9a46295aa3e341238236b26840a9191f

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27 Al(d,alpha) and 27 Al(d,p) Nuclear Reaction Cross Sections at Ed<2MeV Measured at Three Backward Scattering Angles Related to NRA

Autor: M. Salimi, I. Vickridge, Emrick Briand, J.-J. Ganem, O. Kakuee, S. F. Masoudi, H. R. kheiri

The cross-sections of deuteron-induced nuclear reactions suitable for ion beam analysis, measured in different laboratories, are often significantly different. In the present work, differential cross-sections of 27 Al(d,p) and 27 Al(d,α) reactions w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c14a425eb937b04781849e9d6156403
https://doi.org/10.21203/rs.3.rs-574105/v1

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Oxygen incorporated during deposition determines the crystallinity of magnetron-sputtered Ta3N5 films

Autor: Tiberiu Minea, Hélène Magnan, Martin Rudolph, D. Stanescu, Marie-Christine Hugon, Nathalie Herlin-Boime, I. Vickridge, Eddy Foy, José Alvarez, Jean-Paul Kleider, B. Bouchet-Fabre

Publikováno v: Thin Solid Films
Thin Solid Films, 2019, 685, pp.204-209. ⟨10.1016/j.tsf.2019.06.031⟩
Thin Solid Films, Elsevier, 2019, 685, pp.204-209. ⟨10.1016/j.tsf.2019.06.031⟩

International audience; Ta3N5 belongs to the group of transition metal nitrides with the cation in a high oxidation state. These are typically challenging to synthesize owing to the low reactivity of nitrogen. This applies similarly to Ta3N5 that cry

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5780203f45514d5e618a0e0d57ce8ca
https://hal.science/hal-02271107/document

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Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study

Publikováno v: Surface and Interface Analysis. 36:1269-1303

A study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscatte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c206492dbf1f6e8656b96e66e11f4de
https://doi.org/10.1002/sia.1909

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Construction safety legislation framework in China

Autor: J. Zhang, Dongping Fang, I. Vickridge

Publikováno v: Proceedings of the Institution of Civil Engineers - Municipal Engineer. 156:169-173

China is becoming the largest construction site in the world. Along with the appearance of a large number of fiercely competitive construction companies and the introduction of new construction techniques and materials, personal injury and fatal acci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a7d453f8ed8f9bbd33ae2f9a3fe0e8
https://doi.org/10.1680/muen.2003.156.3.169

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Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2−Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon

Autor: J.-J. Ganem, I. Trimaille, T. Åkermark, and I. Vickridge, S. Rigo

Publikováno v: The Journal of Physical Chemistry B. 103:9910-9914

The oxygen exchange reactions can give valuable information concerning the oxidation mechanisms since they can be intermediate reactions. During dry thermal oxidation of silicon there are at least two different oxygen exchange reactions: oxygen excha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b7eab7fdd5eba66857847067ce57b8d
https://doi.org/10.1021/jp991788e

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Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations

Autor: I. Vickridge, J.-J. Ganem, J. L. Cantin, T. Åkermark, H. J. von Bardeleben, S. Rigo, I. Trimaille, L. G. Gosset

Publikováno v: Scopus-Elsevier

The modification by postoxidation NO treatments of the Si/SiO2 interface in thermally grown Si(100)/SiO2 layers has been studied by nuclear reaction analysis and electron paramagnetic resonance spectroscopy. Our results demonstrate a selective incorp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08b3fbda3214c4cae6032892ae00879e
https://doi.org/10.1063/1.369730

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CIVIL ENGINEERING IN CHINA

Autor: I Vickridge, Y Lu

Publikováno v: Proceedings of the Institution of Civil Engineers - Civil Engineering. 132:14-23

At the present time there is more construction being carried out in China than in any other single country in the world. With a population in excess of one billion and a rapidly expanding economy, China represents a huge, but difficult, potential mar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f9317ef17e8c61ee44612c7024a7852
https://doi.org/10.1680/icien.1999.31235

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A 13C isotopic tracing study of a-C:H thin-film growth

Autor: J. Perrière, I. Vickridge, A. Laurent

Publikováno v: Applied Physics A Solids and Surfaces. 58:187-190

The growth mechanisms of amorphous carbon (a-C:H) thin films obtained by the decomposition of methane gas in a multipolar plasma set up were studied using 13C as a tracer. Hydrogenated carbon films first grown in a methane plasma with natural isotopi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f18164790cb3e0f8c180ebc6dafd8f72
https://doi.org/10.1007/bf00332177

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