Zobrazeno 1 - 10
of 824
pro vyhledávání: '"and Huang, S. H."'
Autor:
Melnikov, M. Yu., Smirnov, D. G., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an ord
Externí odkaz:
http://arxiv.org/abs/2409.06686
Publikováno v:
Appl. Phys. Lett. 125, 153102 (2024)
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapp
Externí odkaz:
http://arxiv.org/abs/2405.18229
Autor:
Chen, Q., Huang, S. H. -Y., Ma, Q., Smith, E. M., Sharron, H., Aczel, A. A., Tian, W., Gaulin, B. D.
The parallel stripe phase is remarkable both in its own right, and in relation to the other phases it co-exists with. Its inhomogeneous nature makes such states susceptible to random fields from quenched magnetic vacancies. We argue this is the case
Externí odkaz:
http://arxiv.org/abs/2310.18218
Publikováno v:
Phys. Rev. B 109, L041114 (2024)
We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility S
Externí odkaz:
http://arxiv.org/abs/2310.03145
Autor:
Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 13, 17364 (2023)
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effect
Externí odkaz:
http://arxiv.org/abs/2304.04272
Autor:
Li, X. H., Bai, P., Huang, S. H., Bai, X. Q., Song, W. J., Lian, X. R., Hu, C., Shi, Z. W., Shen, W. Z., Zhang, Y. H., Fu, Z. L., Shao, D. X., Tan, Z. Y., Cao, J. C., Tan, C., Xu, G. Y.
Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction i
Externí odkaz:
http://arxiv.org/abs/2205.11717
Autor:
Chen, D., Cai, S., Hsu, N. -W., Huang, S. -H., Chuang, Y., Nielsen, E., Li, J. -Y., Liu, C. W., Lu, T. M., Laroche, D.
Publikováno v:
Appl. Phys. Lett. 119, 223103 (2021)
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum
Externí odkaz:
http://arxiv.org/abs/2112.03138
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M. M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, Amy Y. X., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 12, 5080 (2022)
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
http://arxiv.org/abs/2106.05927
Autor:
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 103, 161302 (2021)
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The
Externí odkaz:
http://arxiv.org/abs/2101.05876
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 102, 081119(R) (2020)
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
http://arxiv.org/abs/2004.14968