Zobrazeno 1 - 10
of 59
pro vyhledávání: '"and H. Jungblut"'
Publikováno v:
physica status solidi (a). 204:1245-1249
The transition from sustained to damped current oscillations or to stationary behavior is described using a model based on morphological aspects. A roughening of the oxide and of the underlying Si surface is predicted, in accordance with measurements
Autor:
Michael Lublow, Katarzyna Skorupska, Mohammed Aggour, Joachim J. Lewerenz Hans, H. Jungblut, Michael Kanis
Publikováno v:
ECS Transactions. 2:1-9
Oscillatory behaviour of silicon electrodes in fluoride containing solution results in formation of nanoporous oxides. Metal electrodeposition into these pores results in local Schottky junction formation. Metal nanoemitters are contacted with a tran
Publikováno v:
ECS Transactions. 2:63-74
The enzyme reverse transcriptase (RT) of the human immunodeficiency virus (HIV) is imaged by scanning tunnelling microscopy (STM). RTs are selected due to their highly specific structure and their biochemical and medical relevance. The enzymes are de
Publikováno v:
Journal of Electroanalytical Chemistry. 599:313-322
The reverse transcriptase (RT) enzymes of the human immune deficiency virus 1 (HIV-1) and of the avian myeloblastosis virus (AMV) are deposited onto the semiconducting substrate n-MoTe2 and imaged by scanning tunnelling microscopy (STM). Molecule sel
Publikováno v:
Scopus-Elsevier
Les regimes d'initiation de nanostructures sur le silicium monocristallin ont ete analyses en combinant la microscopie a force atomique (AFM) et la spectroscopie de photoelectrons induits par rayonnement synchrotron (SRPES), qui permettent d'obtenir
Publikováno v:
Surface Science. 597:93-101
The divalent dissolution of float zone (FZ) Si(1 1 1) in dilute ammonium fluoride solutions at pH 4 is followed by contact mode atomic force microscopy (AFM). Using a variety of photoelectrochemical preparation conditions rather similar structures ar
Publikováno v:
Electrochemistry Communications, Vol 7, Iss 10, Pp 1077-1081 (2005)
Silicon electrodes were conditioned in alkaline solution at potentials negative from open circuit (ocp). The dark I–V characteristic of n-Si(111) in accumulation reveals Butler–Volmer behaviour for outer sphere charge transfer of the hydrogen evo
Publikováno v:
Electrochemistry Communications, Vol 6, Iss 12, Pp 1243-1248 (2004)
Porous silicon and its luminescent properties are well known for more than a decade. The origin of the nanoporosity evolution, however, is still obscure. We address this topic by investigating the earliest detectable stages of silicon dissolution usi
Publikováno v:
Electrochemistry Communications, Vol 6, Iss 8, Pp 838-842 (2004)
A combined photoelectrochemistry – atomic force microscopy (AFM) investigation on divalent silicon dissolution in dilute ammonium fluoride at pH 4.5 and 4 reveals the existence of over 200 nm large atomic terrace remnants from the original hydrogen
Publikováno v:
Superlattices and Microstructures. 36:211-217
The initial processes leading from an atomically flat Si surface to porous silicon formation are not well known and detailed surface analytical investigations on the dissolution steps are still lacking. By performing electrochemical experiments in di