Zobrazeno 1 - 10
of 10 425
pro vyhledávání: '"algan/gan"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 698-702 (2024)
In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperatu
Externí odkaz:
https://doaj.org/article/e246a3fb2ead4f2f88be27115a184085
Autor:
Partha Banerjee, Aritra Acharyya, Rajib Das, Arindam Biswas, Anup Kumar Bhattacharjee, Saurav Mallik, Haya Mesfer Alshahrani, E. Elshiekh, Mohamed Abbas, Ben Othman Soufiene
Publikováno v:
IEEE Access, Vol 12, Pp 123656-123677 (2024)
The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG). Utilizing a nanostrip patch type pla
Externí odkaz:
https://doaj.org/article/82537b495f144642b49a3e0312dbd9d4
Autor:
Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of $6.0 ~\mu \text{m}$ as int
Externí odkaz:
https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0
Publikováno v:
IEEE Access, Vol 12, Pp 16989-16998 (2024)
In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the ch
Externí odkaz:
https://doaj.org/article/f0f3459fbeaa415eaa9c4a843fc3e325
Autor:
Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu
Publikováno v:
IEEE Access, Vol 12, Pp 16089-16094 (2024)
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density
Externí odkaz:
https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822
Autor:
Zhe Chuan Feng, Ming Tian, Xiong Zhang, Manika Tun Nafisa, Yao Liu, Jeffrey Yiin, Benjamin Klein, Ian Ferguson
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1769 (2024)
AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical pr
Externí odkaz:
https://doaj.org/article/a08b91d0c63b4b2588c06c4269cf9bd1
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107701- (2024)
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that
Externí odkaz:
https://doaj.org/article/3e647258f10a47059e3038da87040ad8
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2274-2280 (2023)
AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications. However, the defects of epitaxial growth AlGaN/GaN HEMTs are d
Externí odkaz:
https://doaj.org/article/490e42bf59714803b3c7962688f07cd8
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.