Zobrazeno 1 - 10
of 17 224
pro vyhledávání: '"algan"'
Publikováno v:
Journal of Information Display, Pp 1-7 (2024)
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass grea
Externí odkaz:
https://doaj.org/article/bd89fba2d366436dabdd16e13b8216c8
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 4, Pp 100795- (2024)
High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure de
Externí odkaz:
https://doaj.org/article/bd58bf1244834f938425c913088fa23b
Akademický článek
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Akademický článek
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Autor:
Razeen, Ahmed S. a, b, ∗, Tang, Eric X. b, Yuan, Gao c, Ong, Jesper c, Radhakrishnan, K. a, Tripathy, Sudhiranjan b, ∗∗
Publikováno v:
In Optical Materials April 2024 150
Publikováno v:
IEEE Access, Vol 12, Pp 131188-131204 (2024)
Due to environmental friendliness, small size, long lifetime, and adjustable light-emitting wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great development potential in the fields of biochemical detection, sterilizati
Externí odkaz:
https://doaj.org/article/7b7714e34a994b3e8d9050a2d6898da3
Iterative density matrix on the mid-infrared optical absorption of GaN/AlGaN quantum well photodiode
Autor:
Ortakaya, Sami ⁎, a, b
Publikováno v:
In Next Research December 2024 1(2)
Autor:
Wu, Xian a, Shi, Hongkai a, Wang, Yuyan a, Dai, Yuting a, Du, Chaoling a, b, Diao, Yu c, ⁎, Xia, Sihao a, b, ⁎⁎
Publikováno v:
In Micro and Nanostructures February 2025 198
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-7 (2024)
Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} , or {1 $$\over
Externí odkaz:
https://doaj.org/article/1a016f3b82bb416cbdd1ab13ccfbaabf
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1356 (2024)
Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HE
Externí odkaz:
https://doaj.org/article/2802957f54784e2687088729cf6bce99