Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Zwanenburg F"'
Autor:
Froning, F. N. M., Rančić, M. J., Hetényi, B., Bosco, S., Rehmann, M. K., Li, A., Bakkers, E. P. A. M., Zwanenburg, F. A., Loss, D., Zumbühl, D. M., Braakman, F. R.
Publikováno v:
Phys. Rev. Research 3, 013081 (2021)
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction
Externí odkaz:
http://arxiv.org/abs/2007.04308
Autor:
de Almeida, A. J. Sousa, Seco, A. Marquez, Berg, T. van den, van de Ven, B., Bruijnes, F., Amitonov, S. V., Zwanenburg, F. A.
Publikováno v:
Phys. Rev. B 101, 201301 (2020)
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next
Externí odkaz:
http://arxiv.org/abs/2001.05045
Autor:
de Vries, F. K., Shen, J., Skolasinski, R. J., Nowak, M. P., Varjas, D., Wang, L., Wimmer, M., Ridderbos, J., Zwanenburg, F. A., Li, A., Koelling, S., Verheijen, M. A., Bakkers, E. P. A. M., Kouwenhoven, L. P.
Publikováno v:
Nanoletters 2018
Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly rela
Externí odkaz:
http://arxiv.org/abs/1806.01815
Autor:
Froning, F. N. M., Rehmann, M. K., Ridderbos, J., Brauns, M., Zwanenburg, F. A., Li, A., Bakkers, E. P. A. M., Zumbühl, D. M., Braakman, F. R.
Publikováno v:
Appl. Phys. Lett. 113, 073102 (Aug 15, 2018)
We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest d
Externí odkaz:
http://arxiv.org/abs/1805.02532
Publikováno v:
Scientific Reports 6, Article number: 38127 (2016)
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both bef
Externí odkaz:
http://arxiv.org/abs/1702.06857
Autor:
Spruijtenburg, P. C., Ridderbos, J., Mueller, F., Leenstra, A. W., Brauns, M., Aarnink, A. A. I., van der Wiel, W. G., Zwanenburg, F. A.
Publikováno v:
Appl. Phys. Lett. 102, 192105 (2013)
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using elec
Externí odkaz:
http://arxiv.org/abs/1304.2870
Publikováno v:
AIP Advances 1, 042111 (2011)
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust
Externí odkaz:
http://arxiv.org/abs/1107.1557
Publikováno v:
Nanotechnology 22, 335704 (2011)
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin
Externí odkaz:
http://arxiv.org/abs/1103.2895
Autor:
Lai, N. S., Lim, W. H., Yang, C. H., Zwanenburg, F. A., Coish, W. A., Qassemi, F., Morello, A., Dzurak, A. S.
Publikováno v:
Scientific Reports 1, Article number: 110 (2011)
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the
Externí odkaz:
http://arxiv.org/abs/1012.1410
Publikováno v:
Nanotechnology 21, 274018 (2010)
We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus
Externí odkaz:
http://arxiv.org/abs/1002.2270