Zobrazeno 1 - 10
of 423
pro vyhledávání: '"Zvonkov, B. N."'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Moraes, F. C. D., Ullah, S., Balanta, M. G. A., Iikawa, F., Danilov, Y. A., Dorokhin, M. V., Vikhrova, O. V., Zvonkov, B. N., Hernandez, F. G. G.
Publikováno v:
Sci.Rep. 9:7294 (2019) 1-7
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, t
Externí odkaz:
http://arxiv.org/abs/1811.06095
Autor:
Kudrin, A. V., Vikhrova, O. V., Danilov, Yu. A., Dorokhin, M. V., Kalentyeva, I. L., Konakov, A. A., Vasiliev, V. K., Pavlov, D. A., Usov, Yu. V., Zvonkov, B. N.
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn {\delta}-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium i
Externí odkaz:
http://arxiv.org/abs/1804.07650
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Balanta, M. A. G., Brasil, M. J. S. P., Iikawa, F., Mendes, Udson C., Brum, J. A., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Zvonkov, B. N.
Publikováno v:
Sci. Rep. 6, 24537 (2016)
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs b
Externí odkaz:
http://arxiv.org/abs/1511.02881
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An op
Externí odkaz:
http://arxiv.org/abs/1211.4312
Autor:
Sherstobitov, A. A., Minkov, G. M., Germanenko, A. V., Rut, O. E., Soldatov, I. V., Zvonkov, B. N.
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density dis
Externí odkaz:
http://arxiv.org/abs/1009.0140
Publikováno v:
Phys. Rev. B 82, 035306 (2010)
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the weaker temp
Externí odkaz:
http://arxiv.org/abs/1004.3415
Autor:
Aronzon, B. A., Kovalchuk, M. V., Pashaev, E. M., Chuev, M. A., Kvardakov, V. V., Subbotin, I. A., Rylkov, V. V., Pankov, M. A., Lagutin, A. S., Zvonkov, B. N., Danilov, Yu. A., Vihrova, O. V., Lashkul, A. V., Laiho, R.
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000
Externí odkaz:
http://arxiv.org/abs/0708.0056
Publikováno v:
Phys. Rev. B 76, 165314 (2007)
The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conduc
Externí odkaz:
http://arxiv.org/abs/0705.3117