Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Zvonimir Gabric"'
Publikováno v:
Microelectronic Engineering. 83:2386-2390
Electrical measurements demonstrate that some metastable defects are present inside airgap interconnect structures realized with the close-off approach. Leakage and capacitance strongly depend on sweep conditions and temperature, which suggests the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::794db4e26490f988c4210661c07afca6
https://doi.org/10.1016/j.mee.2006.10.042
https://doi.org/10.1016/j.mee.2006.10.042
Publikováno v:
Microelectronic Engineering. 82:362-367
Air gaps offer an interesting alternative to low-k or ultra-low-k materials in order to reduce the line-to-line capacitance in a metallization system. A possible approach for air gap fabrication is based upon selective ozone/TEOS deposition. Feasibil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc451c6f884d7c1050c80f64bf284c4f
https://doi.org/10.1016/j.mee.2005.07.017
https://doi.org/10.1016/j.mee.2005.07.017
Autor:
M. Traving, M. Engelhardt, Günther Schindler, Werner Pamler, Zvonimir Gabric, Andreas Stich, W. Honlein
Publikováno v:
AIP Conference Proceedings.
Copper‐based nano interconnects featuring CDs well beyond today’s chip generations and air gap structures were fabricated and subjected to electrical characterization and tests to get already today insight on functionality and reliability aspects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4e53533eb32fa61900efd51d13761c
https://doi.org/10.1063/1.2173526
https://doi.org/10.1063/1.2173526
Publikováno v:
2006 International Interconnect Technology Conference.
The electrical properties of copper metal lines within an air gap scheme were measured and compared to structures without air gaps. Two metal layers with air gap structures using a close-off processing scheme with selective ozone TEOS deposition were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e9d765977a9e41dafc329a1ee40917
https://doi.org/10.1109/iitc.2006.1648668
https://doi.org/10.1109/iitc.2006.1648668
Autor:
F. Gaillard, J. Torres, G. Imbert, V. Girault, Lucile Arnaud, Roel Daamen, Vincent Jousseaume, Zvonimir Gabric, Gérard Passemard, Romano Hoofman, L.G. Gosset, J. Mitard, Vincent Arnal, M. Assous, C. Guedj, Werner Pamler, Andreas Stich, A. Toffoli, Laurent Favennec, D. Bouchu
Publikováno v:
2006 International Interconnect Technology Conference.
The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed informat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1068b959c2552005d7e2608d88bcf620
https://doi.org/10.1109/iitc.2006.1648695
https://doi.org/10.1109/iitc.2006.1648695
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c013c050c288cdd8fb57971111b1f6
https://doi.org/10.1109/iitc.2004.1345723
https://doi.org/10.1109/iitc.2004.1345723
Autor:
Maik Liebau, Franz Kreupl, Robert Seidel, Zvonimir Gabric, Eugen Unger, Georg Duesberg, Andrew Graham
Publikováno v:
AIP Conference Proceedings.
The unique properties of carbon nanotubes (CNTs) make them promising candidates for electrical conductors in microelectronic devices. The parallel integration of CNTs into processes that are compatible with the requirements of the microelectronic ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f148d3e094b8e70376072060a3f861d
https://doi.org/10.1063/1.1812145
https://doi.org/10.1063/1.1812145
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-839-C2-846. ⟨10.1051/jp4:1991299⟩
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-839-C2-846. ⟨10.1051/jp4:1991299⟩
A new planarizing passivation scheme has been developed. The passivation sequence consists of a planarized SiO2 (deposition/etch-back/deposition ; similar to that for the intermetal dielectric in-situ planarization) with a sandwich of PSG and low-str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad681cdc8fd2d79ad4164baf82c658b3
https://hal.archives-ouvertes.fr/jpa-00249891
https://hal.archives-ouvertes.fr/jpa-00249891
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.