Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Zuyao Zhou"'
Publikováno v:
Journal of Rare Earths. 41:658-665
Publikováno v:
Materials Today Nano. 16:100142
Laser direct writing (LDW) system is a maskless, highly efficient, and cost-effective micro-/nanofabrication tool and has been widely used in many fabrication fields such as Micro-Electro-Mechanical System (MEMS), photomask, various micro-/nanostruct
Autor:
X.T. Yang, B.W. Wei, Xiao Cai, Jinchao Zhang, X.D. Yang, Y. He, W.M. Qiao, G.Q. Xiao, Jixia Li, Ruishi Mao, Jian-Cheng Yang, Ping Li, Lizhen Ma, Wenzeng Zhang, Litao Sun, K.T. Man, Zuyao Zhou, Daqing Gao, Heng Xu, W. L. Zhan, P. Yuan, Jun Xia, M. T. Song, D.Z. Xie, Yang Yang, You-Jin Yuan, Yu Liu, W.P. Chai, Zhao Hongyun, D.Y. Yin, J. Shi, Zijian Xu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 317:214-217
The HIRFL–CSR, as an upgrade of the HIRFL, has been put into operation since 2008. Together with a series of improvements of injector cyclotrons, the HIRFL is in a very good state and can provide all ion species from proton to uranium with energy v
Publikováno v:
Materials Letters. 139:480-482
Ce doped Y 3 Al 5 O 12 (Ce:YAG) transparent ceramics could be combined with blue chips of high power output, for applications of high power white light emitting diodes (LEDs). In this paper, we found that through the thickness variation of Ce:YAG tra
Publikováno v:
Journal of Applied Physics. 85:94-98
Well-defined bands of cavities have been formed beneath the buried oxide (BOX) layer of two sets of separation-by-implantation-of-oxygen (SIMOX) wafers by H+ and He+ implantation. The gettering of Cu impurities, which were implanted into the top Si l
Publikováno v:
physica status solidi (a). 165:361-365
Single crystal silicon wafers have been implanted by 5 x 10 16 cm -2 H + ions at an energy of 140 keV at room temperature. After cutting, the samples were annealed at temperatures ranging from 200 to 900 °C for 30 min and examined by Rutherford back
Autor:
Zixin Lin, Jianxin Wang, Zugang Liu, Shichang Zou, Chenglu Lin, Xiaohong Shi, Zuyao Zhou, H. X. Xin
Publikováno v:
Science in China Series E: Technological Sciences. 40:361-368
The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), ultraviolet photoluminescence spectros
Autor:
Filadelfo Cristiano, Youhua Qian, Liangyao Chen, P.L.F. Hemment, Zhiping He, Chenglu Lin, Zuyao Zhou, Shichang Zou
Publikováno v:
Journal of The Electrochemical Society. 143:2636-2640
Low energy ion implantation at large tilt angles is an attractive new technology for obtaining ultrashallow P-N junctions for very large scale integrated and vacuum microelectronic devices. Cross-sectional transmission electron microscopy (XTEM), Rut
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:352-355
Co/Ti bimetallic layers and a TiN capping layer were sequentially deposited on a SIMOX wafer. The influence of the residual oxide on the Si surface was reduced by depositing Ti first. Subsequently an epitaxial CoSi 2 film was grown by the interaction
Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
Publikováno v:
Chinese Physics Letters. 11:231-234
Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured