Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Zurab Jibuti"'
Autor:
Tatiana Sakharova, Lado Jibuti, Revaz G. Melkadze, Zurab Jibuti, Michael Heuken, Nina Khuchua, Marina Tigishvili, Nugzar Dolidze
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-6
A new technique is proposed, verified, and described for measuring photosensitivity spectra of semiconductor materials and devices in the wavelength range of 200–4100 nm utilizing an innovative setup termed “Polychromator” with a system of cut-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0cf38a6402553b5d8f169418a8ac39
https://doi.org/10.1109/tim.2020.3021109
https://doi.org/10.1109/tim.2020.3021109
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 906:012022
In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4He+ and 40Ar+ are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8843deb71c8a0bf542e88fbd175fd1
https://doi.org/10.1088/1755-1315/906/1/012022
https://doi.org/10.1088/1755-1315/906/1/012022
Autor:
Marina Tigishvili, Nodar Gapishvili, Galina Davbeshko, V. Romanyuk, Nugzar Dolidze, Revaz G. Melkadze, Nina Khuchua, Zurab Jibuti
Publikováno v:
Solid State Phenomena. 242:374-379
For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bae1199d9955971f8b7655c6c23d9c0
https://doi.org/10.4028/www.scientific.net/ssp.242.374
https://doi.org/10.4028/www.scientific.net/ssp.242.374
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 362:012077
Nanosecond laser annealing of GaAs amorphized with B+ ions implantation was investigated. The recrystallization process observed in the experiment does not depend on the initial temperature of the samples (77K or 300K) and can be additive; the effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883f76b1fdc1f73bcfa72f0853c0134e
https://doi.org/10.1088/1755-1315/362/1/012077
https://doi.org/10.1088/1755-1315/362/1/012077
Autor:
Tatiana Sakharova, Zurab Jibuti, G. Peradze, Nodar Gapishvili, Nina Khuchua, Nugzar Dolidze, Revaz G. Melkadze, Marina Tigishvili
Publikováno v:
physica status solidi c. 14:1700094
The optical and electrical characteristics of p–n photodiodes based on monocrystalline n-Si (wafers with ρ = 70 and 10 Ohm · cm and SOI) implanted with B+ in the dose range of 1 × 1014–1 × 1015 сm−2 and annealed at 900 °C (20 min) are stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918a04ae23514f4f85307c17407e4932
https://doi.org/10.1002/pssc.201700094
https://doi.org/10.1002/pssc.201700094
Publikováno v:
IOP Conference Series: Earth & Environmental Science; Nov2019, Vol. 362 Issue 1, p1-1, 1p