Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Zuoming Zhao"'
Publikováno v:
International Journal of Molecular Sciences, Vol 23, Iss 14, p 7746 (2022)
Microsporidia are obligate intracellular parasites that infect a wide variety of hosts ranging from invertebrates to vertebrates. These parasites have evolved strategies to directly hijack host mitochondria for manipulating host metabolism and immuni
Externí odkaz:
https://doaj.org/article/9226bd63dd874fad833d7006a226b512
Publikováno v:
Cailiao Baohu, Vol 56, Iss 9, Pp 161-168 (2023)
For the internal corrosion problem of oil well casing， high-temperature and high-pressure weight loss tests， polarization curves， AC impedance spectroscopy， and potentiostatic polarization electrochemical testing techniques were used， combi
Externí odkaz:
https://doaj.org/article/c48cde43be524bf0aadf704a52adb2a8
Autor:
Yufeng Hou, Zuoming Zhao
Publikováno v:
Advanced Driver Assistance Systems and Autonomous Vehicles ISBN: 9789811950520
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2afe1e4a87630dd3e65877013b56f947
https://doi.org/10.1007/978-981-19-5053-7_8
https://doi.org/10.1007/978-981-19-5053-7_8
Autor:
Du Yeol Ryu, Thomas P. Russell, Tae-Sik Yoon, Ya-Hong Xie, Zuoming Zhao, Ki-Bum Kim, Jian Liu, Hyun-Mi Kim
Publikováno v:
physica status solidi (b). 246:721-724
The growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on patterned SiO2/Si(001) substrates by molecular beam epitaxy were studied. The hexagonally ordered Si holes with 30 nm thick SiO2 mask layer having ∼25 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57a41e4ea17feaea7ccdec07df21ccf8
https://doi.org/10.1002/pssb.200880589
https://doi.org/10.1002/pssb.200880589
Publikováno v:
Journal of Crystal Growth. 311:2147-2150
Mn distribution behaviors and magnetic properties of the Ge0.96Mn0.04 films have been investigated. Different nominal amounts, 12 and 80 nm, of Ge0.96Mn0.04 were grown on Si (0 0 1) substrates at 250 degrees C using solid source molecular beam epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c5b0bb2bbc5d3e3d8ac610d4c9ad82
https://doi.org/10.1016/j.jcrysgro.2008.12.013
https://doi.org/10.1016/j.jcrysgro.2008.12.013
Autor:
Christian Ratsch, W. Feng, Hyungjun Kim, Russel E. Caflisch, O. Hul'ko, Ho-Sub Kim, Kang L. Wang, Zuoming Zhao, Jianlin Liu, Thomas P. Russell, Ki-Bum Kim, Jeehwan Kim, Tae-Sik Yoon, Du Yeol Ryu, Ya-Hong Xie, Biyun Li
Publikováno v:
Thin Solid Films. 508:195-199
The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6118a9fae07fda0b6e15195193f6415b
https://doi.org/10.1016/j.tsf.2005.08.407
https://doi.org/10.1016/j.tsf.2005.08.407
Autor:
Ya-Hong Xie, Wen Feng, Jian Liu, Ki-Bum Kim, Thomas P. Russell, Zuoming Zhao, Tae-Sik Yoon, Du Yeol Ryu, Biyun Li, Hyun-Mi Kim
Publikováno v:
Journal of Crystal Growth. 290:369-373
We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×10 10 cm −2 density. At 9 A G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2d273229920e48afe98fc1072a98e82
https://doi.org/10.1016/j.jcrysgro.2006.02.004
https://doi.org/10.1016/j.jcrysgro.2006.02.004
Publikováno v:
Thin Solid Films. 483:158-163
InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3dc92a1b97ddeabd584e5a6cff9257
https://doi.org/10.1016/j.tsf.2005.01.003
https://doi.org/10.1016/j.tsf.2005.01.003
Publikováno v:
Journal of Crystal Growth. 271:450-455
Self-assembled InAs quantum dots were grown on (0 0 1) orientated Si substrates by molecular beam epitaxy. Growth condition dependence of dot formation was studied. The evolution of size and shape of quantum dots with InAs coverage was examined using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19bb7daaa4bcee7a6ccab10d9dc7b4d
https://doi.org/10.1016/j.jcrysgro.2004.08.013
https://doi.org/10.1016/j.jcrysgro.2004.08.013
Publikováno v:
Journal of Applied Physics; Mar2008, Vol. 103 Issue 6, p066104, 3p, 2 Diagrams, 1 Chart