Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Zuo Fengguo"'
Autor:
Jiang, Xiping, Bai, Fujun, Wang, Song, Guo, Yixin, Zuo, Fengguo, Xiao, Wenwu, Wang, Yubing, Yang, Jianguo, Liu, Ming
Publikováno v:
Journal of Semiconductors; Oct2024, Vol. 45 Issue 10, p1-12, 12p
Autor:
Zhan Qiong, Wang Kexin, Tan Jie, Wang Zhengwen, Li Jin, Ren Qiwei, Cheichan Kau, L. V. Hangbing, Wang Chunjuan, Sun Peng, Ching-Sung Ho, David Yang, Duan Huifu, Wang Song, Li Hua, Sun Hongbin, Kang Yi, Long Xiaodong, Wang Fan, Yu Guoqing, Jia Xuerong, Yu Bing, Yang Daohong, Li Qiannan, Fu Ni, Zhou Jun, Zuo Fengguo, Liu Ming, Jiang Xiping, Bai Liang, Li Mei, Bai Fujun, Hu Sheng
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Increasing demand for DRAM scaling and high-bandwidth has driven DRAM technology to 3D/2.5D integration. With the innovative Hybrid Bonding technology, a new Stacked Embedded DRAM (SEDRAM) architecture was developed on LPDDR4/4X product. In this SEDR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de26f428b32e9290295760db8bbfafbd
https://doi.org/10.1109/iedm13553.2020.9372039
https://doi.org/10.1109/iedm13553.2020.9372039