Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Zulim, Ivan"'
Permanent scaling of MOS devices pushes the ultrathin gate dielectrics into sub 2-nm regime. Physical mechanisms such as direct tunneling, surface roughness, quantum confinement, and polysilicon depletion must be accounted for determining the gate le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::014d620819fe9e0e096d8e78b27cf2eb
https://www.bib.irb.hr/742915
https://www.bib.irb.hr/742915
Hydrogen is a sustainable fuel option and one of the potential solutions for current energy and environmental problems. Its eco-friendly production is really crucial for better environment and sustainable development. Renewables are an emissions-free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::c8f6e92c19d9b10b03cd618523bf9933
https://www.bib.irb.hr/754227
https://www.bib.irb.hr/754227
U modernim MOS unipolarnim tranzistorima izrađenim postupcima visoke integracije, značajno je smanjena ekvivalentna debljina oksidnog sloja. Za pouzdan rad uređaja, ne smije se dogoditi proboj tog tankog dielektričnog sloja ni u uvjetima izložen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::84f84827683dff1d6335c2a74e005c72
https://www.bib.irb.hr/541035
https://www.bib.irb.hr/541035
Autor:
Capan, Ivana, Dubček, Pavo, Buljan, Maja, Desnica, Uroš, Slunjski, Robert, Krstulović, Nikša, Kregar, Zlatko, Milošević, Slobodan, Radić, Nikola, Zorc, Hrvoje, Betti, Tihomir, Zulim, Ivan, Pivac, Branko
In this presentation we shall discuss motivation to study nanostructures and review our recent results obtained in collaboration between several groups. It is clear that properties of nanostructured materials give rise to enhanced properties of vario
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::bccec677a3608ca86b6ff5d0ce2106ca
https://www.bib.irb.hr/425103
https://www.bib.irb.hr/425103
Visoka integracija i minijaturizacija VLSI sklopova ima za poslijedicu velike gustoće struja u radu sklopa a što dalje dovodi do ubrzanih procesa degradacije dielektričnih slojeva. Zbog toga je od velike važnosti istražiti mehanizme degradacije
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::3b51522d89a9882efc8376dd3a200aa7
https://www.bib.irb.hr/467031
https://www.bib.irb.hr/467031
In this paper we describe and evaluate issues that come up in the development of online monitoring systems which connect software tools to a running distributed application. Our primary intension was to elaborate how to deal with complex middleware m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::04c614cc20f478a44e9c7636768d9690
https://www.bib.irb.hr/324923
https://www.bib.irb.hr/324923
Autor:
Pivac, Branko, Capan, Ivana, Zulim, Ivan, Betti, Tihomir, Janicki, Vesna, Zorc, Hrvoje, Dubček, Pavo, Bernstorff, Sigrid
One approach for silicon based next genration solar cells relies the production of suitable Si nanostructured objects in wide bandgap material. Present research on Si nanosize structures is focused on the Si nanocrystals prepared by sputtering of Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::b71cc0a9ec175b2b2d02c87c03f9add8
https://www.bib.irb.hr/306226
https://www.bib.irb.hr/306226
Autor:
Bernstorff, Sigrid, Pivac, Branko, Capan, Ivana, Dubček, Pavo, Janicki, Vesna, Zorc, Hrvoje, Radić, Nikola, Zulim, Ivan, Betti, Tihomir
One approach for silicon based next genration solar cells relies the production of suitable Si nanostructured objects in wide bandgap material. Present research on Si nanosize structures is focused on the Si nanocrystals prepared by sputtering of Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::3143282069dc62c16630b5220fc22241
https://www.bib.irb.hr/317188
https://www.bib.irb.hr/317188
Autor:
Pivac, Branko, Capan, Ivana, Zulim, Ivan, Betti, Tihomir, Janicki, Vesna, Zorc, Hrvoje, Dubček, Pavo, Bernstorff, Sigrid
Recently, Si and Ge nanocrystals (ncs) embedded in a silicon dioxide (SiO2) matrix have been widely studied for their luminescence and charge retention properties for integration as opto-electronic and microelectronic devices in complementary metal-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::336f046302cecd68325f8c39fe615f85
https://www.bib.irb.hr/306227
https://www.bib.irb.hr/306227