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pro vyhledávání: '"Zukhra A. Atamuratova"'
Autor:
Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova, Jean Chamberlain Chedjou, Kyandoghere Kyamakya
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7935 (2020)
In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charg
Externí odkaz:
https://doaj.org/article/ca2717ec3ae04a6ba00f092e2fa0e1fc
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 20:202-206