Zobrazeno 1 - 10
of 308
pro vyhledávání: '"Zuk, J. A."'
Autor:
Vlasukova, L., Komarov, F., Makhavikou, M., van Vuuren, A., Skuratov, V., Dauletbekova, A., Neethling, J., Wendler, E., Zuk, J., Parkhomenko, I., Milchanin, O.
Publikováno v:
In Vacuum February 2023 208
Akademický článek
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Autor:
Tuan, P.L., Kulik, M., Phuc, T.V., Madadzada, A.I., Zelenyak, T.Yu., Turek, M., Żuk, J., Mita, C., Stanculescu, A., Doroshkevich, A.S., Jasinska, B., Khiem, L.H., Anh, N.N., My, N.T. Bao
Publikováno v:
In Thin Solid Films 31 August 2022 756
Autor:
Gluba, L., Yastrubchak, O., Domagala, J. Z., Jakiela, R., Andrearczyk, T., Żuk, J., Wosinski, T., Sadowski, J., Sawicki, M.
Publikováno v:
Phys. Rev. B 97, 115201 (2018)
The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for
Externí odkaz:
http://arxiv.org/abs/1708.06435
Autor:
Wang, Mao, Shaikh, M. S., Li, Yi, Prucnal, S., Zuk, J., Turek, M., Drozdziel, A., Pyszniak, K., Rebohle, L., Kentsch, U., Helm, M., Zhou, Shengqiang
Publikováno v:
Applied Physics Letters; 4/1/2024, Vol. 124 Issue 14, p1-8, 8p
Autor:
Tuan, P.L., Kulik, M., Nowicka-Scheibe, J., Żuk, J., Horodek, P., Khiem, L.H., Phuc, T.V., Anh, Nguyen Ngoc, Turek, M.
Publikováno v:
In Surface & Coatings Technology 25 July 2020 394
Publikováno v:
In Surface & Coatings Technology 15 April 2020 387
Autor:
Gluba, L., Yastrubchak, O., Sek, G., Rudno-Rudziński, W., Sadowski, J., Kulik, M., Rzodkiewicz, W., Rawski, M., Andrearczyk, T., Wosinski, T., Żuk, J.
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence ban
Externí odkaz:
http://arxiv.org/abs/1312.3930
Autor:
Yastrubchak, O., Andrearczyk, T., Domagala, J. Z., Sadowski, J., Gluba, L., Zuk, J., Wosinski, T
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy
Externí odkaz:
http://arxiv.org/abs/1305.4175
Autor:
Yastrubchak, O., Sadowski, J., Krzyzanowska, H., Gluba, L., Zuk, J., Domagala, J. Z., Andrearczyk, T., Wosinski, T.
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and
Externí odkaz:
http://arxiv.org/abs/1305.4056