Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zudian, Qin"'
Autor:
Zudian Qin, Mankoo Lee, S. D. Simeonov, K. El Sayed, I. Avci, Yong-Seog Oh, Pratheep Balasingam, Dipu Pramanik
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
A physically based simulation methodology provides fast and practical EM lifetime prediction. We identified an “EM-aware” region to define the length dependence of Cu-lines under high current stress. For eventual calibration of 2× nm node Cu-lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267088c8c04e5a02dab0cc8c102269f1
https://doi.org/10.1109/irps.2013.6532079
https://doi.org/10.1109/irps.2013.6532079
Autor:
K. El-Sayed, I. Avci, W. Zhou, Yong-Seog Oh, Pratheep Balasingam, M. Zhu, Andrey B. Kucherov, Zudian Qin, M. D. Johnson, S. D. Simeonov, S. Tian, B. Polsky, V. Chawla, B. Mishra, Xiaopeng Xu, S. Li
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a2d49097020e1178e553a865ff19ef
https://doi.org/10.1109/iitc.2012.6251575
https://doi.org/10.1109/iitc.2012.6251575
Autor:
Zhengmin, Qian, Qingci, He, Hung-Mo, Lin, Lingli, Kong, Dunjin, Zhou, Shengwen, Liang, Zhichao, Zhu, Duanping, Liao, Wenshan, Liu, Christy M, Bentley, Jijun, Dan, Beiwei, Wang, Niannian, Yang, Shuangqing, Xu, Jie, Gong, Hongming, Wei, Huilin, Sun, Zudian, Qin
Publikováno v:
Research report (Health Effects Institute). (154)
Fewer studies have been published on the association between daily mortality and ambient air pollution in Asia than in the United States and Europe. This study was undertaken in Wuhan, China, to investigate the acute effects of air pollution on morta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::09450eabfe15d6fde341d41c76b1d09d
https://pubmed.ncbi.nlm.nih.gov/21446212
https://pubmed.ncbi.nlm.nih.gov/21446212
Publikováno v:
2009 International Conference on Environmental Science and Information Application Technology.
The paper applied the data acquisition technology based on wireless network to noise automatic monitoring, combined with the hot issue of remote data transmission, explored and researched the noise data acquisition technique in the environment acoust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0e18fb08a4065a5dd160bdce1a5924
https://doi.org/10.1109/esiat.2009.363
https://doi.org/10.1109/esiat.2009.363
Autor:
Scott T. Dunham, Zudian Qin
Publikováno v:
Physical Review B. 68
Carrier distributions associated with point charges in silicon are calculated via the quantum perturbation method and used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c841296f73a3216ead11f40a5ee27106
https://doi.org/10.1103/physrevb.68.245201
https://doi.org/10.1103/physrevb.68.245201
Autor:
Zudian Qin, Scott T. Dunham
Publikováno v:
MRS Proceedings. 765
Carrier distributions associated with point charges in silicon solved with quantum perturbation theory are used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec6732d0fc18c1706d87b175c03f0f2
https://doi.org/10.1557/proc-765-d5.7
https://doi.org/10.1557/proc-765-d5.7
Autor:
Scott T. Dunham, Zudian Qin
Publikováno v:
MRS Proceedings. 717
In this work, variations in electron potential are incorporated into a Kinetic Lattice Monte Carlo (KLMC) simulator and applied to dopant diffusion in silicon. To account for the effect of dopants, the charge redistribution induced by an external poi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6184e6fc21bf7206028b4d532319e77a
https://doi.org/10.1557/proc-717-c3.8
https://doi.org/10.1557/proc-717-c3.8
Autor:
Scott T. Dunham, Zudian Qin
Publikováno v:
Simulation of Semiconductor Processes and Devices 2001 ISBN: 9783709172780
Kinetic lattice Monte Carlo (KLMC) simulations enable practical atomic-scale modeling of device fabrication processes. In this paper, we discuss implementation of an acceleration algorithm which can provide orders of magnitude speed-up. We apply the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ae5986534ba1115d10c5112d03ef6c
https://doi.org/10.1007/978-3-7091-6244-6_25
https://doi.org/10.1007/978-3-7091-6244-6_25
