Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Zubrilov, Andrey"'
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory material
Externí odkaz:
http://arxiv.org/abs/1912.11010
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Rebane, Yuri, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri
Publikováno v:
Japanese Journal of Applied Physics 52 (2013) 08JE14
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 cm$^{-2}$ to 100 cm$^{-2}$ were found on the surfaces of the films. Origins of pit formation
Externí odkaz:
http://arxiv.org/abs/1902.06465
Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Zubrilov, Andrey, Kogotkov, Viktor, Latyshev, Philipp, Lelikov, Yuri, Leonidov, Andrey, Shreter, Yuri
Publikováno v:
Results in Physics, Volume 13, June 2019, 102233
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
http://arxiv.org/abs/1902.06348
Autor:
Voronenkov, Vladislav, Leonidov, Andrey, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Kogotkov, Viktor, Zubrilov, Andrey, Shreter, Yuri
Publikováno v:
Journal of Physics: Conference Series 1199 (2019) 012004
A free-standing bulk gallium nitride layer with a thickness of 365 $\mu$m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decompo
Externí odkaz:
http://arxiv.org/abs/1902.04672
Publikováno v:
2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus), Saint Petersburg and Moscow, Russia, 2019, pp. 833-837
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced th
Externí odkaz:
http://arxiv.org/abs/1902.03463
Autor:
Gorbunov, Ruslan I, Latyshev, Philipp E., N. I. Bochkareva, Voronenkov, Vlad, M. V. Virko, Zubrilov, Andrey, Kogotkov, Viktor, Yu. S. Lelikov, A. A. Leonidov, Tarala, Vitaly, Shreter, Yuri George
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2cca062070e9dd4ce18ed440f82a2f