Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Zsolt József Horváth"'
Publikováno v:
Semiconductors. 48:942-953
The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si1 − xGex heterostructures with an electron conduction channel in an elastically strained nanoscale silicon layer are investigated. It is demonstrated that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21218b9c34c460807010230835a9502a
https://doi.org/10.1134/s106378261407015x
https://doi.org/10.1134/s106378261407015x
Autor:
Lajos Tóth, Zsolt József Horváth, M.-A. Poisson, László Dobos, Zsolt Endre Horváth, Attila Tóth, Béla Pécz
Publikováno v:
Vacuum. 100:46-49
In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I – V measurements. Tested contacts were annealed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74819aa466ef70edee85b07fe6d637f1
https://doi.org/10.1016/j.vacuum.2013.07.038
https://doi.org/10.1016/j.vacuum.2013.07.038
Autor:
Zsolt József Horváth
Publikováno v:
Journal of Electrical Engineering. 66:235-237
A new type of transfer logic gates with both electrical and/or optical inputs and electrical outputs are proposed, which can be prepared by thin film technology. The possible realization of different logic functions and non-volatile memory logic arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa031cf9e0c0466ad0f30cc9d29b86a
https://doi.org/10.2478/jee-2015-0038
https://doi.org/10.2478/jee-2015-0038
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 51:79-86
Iron silicide nanostructures were grown on Si(001) by a strain-induced, self-assembly method. 1 nm iron was deposited by electron gun evaporation and subsequently annealed at 850 °C for different times, between 10 and 50 min. The formation of nanost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd4603c1413bf7388cf8b371f0a85ad
https://doi.org/10.1016/j.physe.2012.12.014
https://doi.org/10.1016/j.physe.2012.12.014
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 51:104-110
Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory structures with Si or Ge nanocrystals embedded at a depth of 3 nm in the nitride layer were studied. The effect of Si nanocrystals on these properties was opposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53dba9d326df538bfdd4287e387afdc2
https://doi.org/10.1016/j.physe.2013.03.015
https://doi.org/10.1016/j.physe.2013.03.015
Publikováno v:
MRS Proceedings. 1534:A31-A36
Iron silicide nanostructures were grown on Si(001) by strain-induced, self-assembly method. E-gun evaporated iron particles were deposited both on to room temperature and high temperature Si substrates, and were further annealed in situ. The initial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249be91dfd16d0ca68076a0af0ab6dab
https://doi.org/10.1557/opl.2013.295
https://doi.org/10.1557/opl.2013.295
Publikováno v:
MRS Proceedings. 1534:A25-A30
The effects of the oxide and nitride thicknesses and of the presence of semiconductor nanocrystals are studied on the charging behaviour of MNOS and SONOS non-volatile memory structures by the calculation of electron and hole tunnelling probability i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c41f0fb1701c333a7e21575d67b575
https://doi.org/10.1557/opl.2013.294
https://doi.org/10.1557/opl.2013.294
Autor:
Natal'ya A. Alyabina, Mikhail L. Orlov, Natal'ya L. Ivina, Lev K. Orlov, Zsolt József Horváth, V. N. Neverov, A. A. Mel'nikova
Publikováno v:
MRS Proceedings. 1534:A43-A48
The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si1-xGex heterostructures with two-dimensional electron channel (ne ≥ 1012 cm-2) in an elastically strained silicon layer of nanometer thickness have been s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6422c2b48c620e621ca391598ec41fdb
https://doi.org/10.1557/opl.2013.297
https://doi.org/10.1557/opl.2013.297
Autor:
György Molnár, Andrea Edit Pap, Zsolt József Horváth, T. Jászi, Péter Turmezei, P. Basa, Károly Zs. Molnár, Rita Lovassy
Publikováno v:
physica status solidi c. 9:1370-1373
Charging behaviour of MNOS structures containing Ge nanocrytals embedded at the SiO2/Si3N4 interface are studied by experiments and by calculating tunnelling probabilities of electrons and holes to the conductance or valence band of the nitride layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9508c0b85d617fb4bf022467c607bf6
https://doi.org/10.1002/pssc.201100668
https://doi.org/10.1002/pssc.201100668
Autor:
P. Basa, Zsolt József Horváth
Publikováno v:
Materials Science Forum. 609:1-9
The physical background and present status of the application of metal-insulator-silicon structures with semiconductor nanocrystals embedded in the insulator layer for memory purposes is breafly summarized.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4041d3e039e17ada2d84fc57dbeef3b8
https://doi.org/10.4028/www.scientific.net/msf.609.1
https://doi.org/10.4028/www.scientific.net/msf.609.1