Výsledky vyhledávání - "Zs. J. Horváth"

Direct correlation between modulus and the crystalline structure in isotactic polypropylene

Autor: János Móczó, József Varga, Alfréd Menyhárd, P. Suba, Zs. László, H. M. Fekete, A. O. Mester, Gy. Vörös, Zs. J. Horváth

Publikováno v: eXPRESS Polymer Letters, Vol 9, Iss 3, Pp 308-320 (2015)

Mechanical properties and crystalline structure of isotactic polypropylene (iPP) types were studied using poly- mers, which were polymerized differently in order to obtain diverse molecular architectures. The objective of this work is to describe qua

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a677b834ada5be532afc694117a32203
https://doi.org/10.3144/expresspolymlett.2015.28

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Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Autor: A.A.Mel’ nikova, N. L. Ivina, Zs. J. Horváth, M. L. Orlov, V. N. Neverov, N. A. Alyabina, L. K. Orlov

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 51:87-93

The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si 1− x Ge x heterostructures with two-dimensional electron channel ( n e ≥10 12 cm −2 ) in an elastically strained silicon layer of nanometer thickness

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b04e942023807a8151e4dbdf5b974f06
https://doi.org/10.1016/j.physe.2013.04.002

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Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals

Autor: G. Molnár, Béla Pécz, Andrea Edit Pap, Zs. J. Horváth, T. Jászi, Lajos Tóth, László Dobos, K. Z. Molnár, P. Basa

Publikováno v: Nanoscience and Nanotechnology Letters. 5:513-517

The charging behaviour of MNS (metal-nitride-silicon) and MNOS (metalnitride- oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance-voltage (C-V) and memory window measurements and by simulation. Both the width of hys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eea46b8514ad887e2536380081207576
https://doi.org/10.1166/nnl.2013.1560

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Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

Autor: T. Jászi, P. Basa, Andrea Edit Pap, G. Molnár, Zs. J. Horváth, K. Z. Molnár

Publikováno v: Applied Surface Science. 269:23-28

The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance–voltage (C–V) and memory window measurements and by simulation. Both the width of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf07f09b8f36633f4120664028b15c10
https://doi.org/10.1016/j.apsusc.2012.11.009

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Effect of nitrogen doping on photoresponsivity of ZnO films

Autor: L. A. Kosyachenko, Viktor Strelchuk, K. A. Avramenko, A. I. Ievtushenko, Valery M. Sklyarchuk, G. V. Lashkarev, V. A. Karpyna, V. I. Lazorenko, V. M. Tkach, O. F. Sklyarchuk, Zs. J. Horváth, M. G. Dusheyko

Publikováno v: physica status solidi (a). 207:1746-1750

Investigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N-based detectors. It i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64b12cf2d0eee62377b0446fd3ea892f
https://doi.org/10.1002/pssa.200983750

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High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

Autor: A. P. Astakhova, Yu. P. Yakovlev, N. D. Il’inskaya, N. D. Stoyanov, S. S. Kizhayev, A. S. Golovin, O. Yu. Serebrennikova, Zs. J. Horváth, K. V. Kalinina

Publikováno v: Semiconductors. 44:263-268

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p− and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54c531d88b2021a7c1efc7761c3f2ac3
https://doi.org/10.1134/s1063782610020235

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Memory effect on CdSe nanocrystals embedded in SiO2 matrix

Autor: M. J. M. Gomes, Zs. J. Horváth, Eduardo Alves, Anabela G. Rolo, S. Levichev, Adil Chahboun, P. Basa, N.P. Barradas

Publikováno v: Solid State Communications. 148:105-108

CdSe nanocrystals (NCs) embedded in a solid SiO2 matrix were fabricated by RF-sputtering technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent confinement effect. The CdSe NCs charging effects were electrically charac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cbfe20667cab712eef7e2754eb3340f
https://doi.org/10.1016/j.ssc.2008.07.047

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Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

Autor: Zs. J. Horváth, Bernard Beaumont, Lajos Tóth, Z. Bougrioua, László Dobos, Béla Pécz, Z.E. Horváth

Publikováno v: Vacuum
Vacuum, Elsevier, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩
Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩

Au and Ti/Au layers were deposited on n-GaN. The samples were annealed at 400, 700 and 900 °C for 10 min in vacuum. The contacts were rectifying up to 700 °C and the highest Schottky barrier height of 1.07 eV was obtained for an Au single layer by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c087f14b489c0d3cdfa81fb6e8f30a5
https://doi.org/10.1016/j.vacuum.2007.11.005

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Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals

Autor: Tivadar Lohner, A.S. Alagoz, Mustafa Kulakci, P. Basa, Rasit Turan, K. Nagy, Zs. J. Horváth

Publikováno v: Applied Surface Science. 254:3626-3629

SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40–100%. Most of the structures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8df212d294fe767a3bfa3d4ecb1dd732
https://doi.org/10.1016/j.apsusc.2007.10.075

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Electrical and Memory Properties of Si3N4 MIS Structures with Embedded Si Nanocrystals

Autor: Béla Pécz, Andrea Edit Pap, T. Jászi, László Dobos, P. Szollosi, P. Basa, Lajos Tóth, Zs. J. Horváth, K. Nagy

Publikováno v: Journal of Nanoscience and Nanotechnology. 8:812-817

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different SiO2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8388431f6fb2c7ccfeb0f7ae12e34fd5
https://doi.org/10.1166/jnn.2008.a120

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