Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Zr₃N₂"'
Publikováno v:
In Ceramics International 15 July 2022 48(14):20478-20484
Publikováno v:
Ceramics International. 48:20478-20484
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e530dbe1e04b01cf2770b6760a3d7c8c
https://doi.org/10.1016/j.ceramint.2022.04.007
https://doi.org/10.1016/j.ceramint.2022.04.007
Publikováno v:
IEEE Access, Vol 10, Pp 6622-6628 (2022)
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current l
Externí odkaz:
https://doaj.org/article/c4d522749f6f4876989295683a9c1cb9
Publikováno v:
IEEE Access, Vol 10, Pp 6622-6628 (2022)
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b27c5d5308cc29a8fae7ddc96d9b8a0
https://ieeexplore.ieee.org/document/9678317/
https://ieeexplore.ieee.org/document/9678317/
Akademický článek
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Publikováno v:
Canadian Journal of Physics. Dec2014, Vol. 92 Issue 12, p1581-1586. 6p. 1 Chart, 6 Graphs.
Publikováno v:
Ceramics International. 47:21943-21949
In this study, we present a self-rectifying resistive switching property observed in Ti/Zr3N2/p-Si and Ti/Zr2N/p-Si metal-insulator-semiconductor (MIS) capacitors for array applications. Compared to the Zr2N film, the Zr3N2 film has a higher trap den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6452c6f1fbe12aa10931fc356f929b5c
https://doi.org/10.1016/j.ceramint.2021.04.212
https://doi.org/10.1016/j.ceramint.2021.04.212
Autor:
Yu, Shuyin, Zeng, Qingfeng, Oganov, Artem R., Frapper, Gilles, Huang, Bowen, Niu, Haiyang, Zhang, Litong
Publikováno v:
RSC Advances; 2017, Vol. 7 Issue 8, p4697-4703, 7p
Publikováno v:
Physical Chemistry Chemical Physics (PCCP); 10/14/2022, Vol. 24 Issue 38, p23265-23278, 14p
Autor:
Kim, H.1, Cepler, A.1, Cetina, C.1, Knies, D.1, Osofsky, M.1, Auyeung, R.1, Piqué, A.1 pique@nrl.navy.mil
Publikováno v:
Applied Physics A: Materials Science & Processing. Nov2008, Vol. 93 Issue 3, p593-598. 6p. 1 Black and White Photograph, 5 Graphs.