Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Zorian S. Masnyj"'
Autor:
D. Minyushkin, William J. Dauksher, V.V. Ivin, M.V. Silakov, Kevin J. Nordquist, Pawitter J. S. Mangat, D. J. Resnick, David P. Mancini, Zorian S. Masnyj, N.V. Vorotnikova, Eric S. Ainley, Bing Lu
Publikováno v:
Microelectronic Engineering. :505-510
One promising technology for next generation lithography is the electron projection technique called SCALPEL. Relatively thin membrane and scattering materials are required for high contrast imaging during SCALPEL wafer exposures. The thin SCALPEL me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::714cf67c1852532a6192ff3ebf08cb0a
https://doi.org/10.1016/s0167-9317(01)00541-x
https://doi.org/10.1016/s0167-9317(01)00541-x
Autor:
David P. Mancini, Eric S. Ainley, Douglas J. Resnick, Kathleen A. Gehoski, William J. Dauksher, Pawitter J. S. Mangat, Zorian S. Masnyj, Kevin J. Nordquist
Publikováno v:
SPIE Proceedings.
Step and Flash Imprint Lithography (SFIL) is an attractive low-cost method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent thereby facilitating conventional overlay t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998b83e4e29f5909d59f9ce13f1793e4
https://doi.org/10.1117/12.467753
https://doi.org/10.1117/12.467753
Autor:
William J. Dauksher, James R. Wasson, Bing Lu, Pawitter J. S. Mangat, Zorian S. Masnyj, Eric Weisbrod, Eric S. Ainley, Douglas J. Resnick, Kevin J. Nordquist
Publikováno v:
SPIE Proceedings.
As semiconductor device requirements approach the 70 nm lithography node the development and implementation of a next-generation lithography (NGL) technology and the associated masks becomes of paramount importance. We have been developing Extreme Ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5f66642cbf7cbe3e34f8610ae3ebc7
https://doi.org/10.1117/12.477479
https://doi.org/10.1117/12.477479
Autor:
Pawitter J. S. Mangat, Zorian S. Masnyj, Douglas J. Resnick, Kevin J. Nordquist, Eric S. Ainley, Bing Lu
Publikováno v:
SPIE Proceedings.
The Semiconductor Industry Association (SIA) has placed stringent requirements on Next GenerationLithography mask critical dimension (CD) control. A new chemically amplified (CA) positive resist,Shipley XP2040D was evaluated for mask making applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a6debe6562203be6f67cb5a71452a1
https://doi.org/10.1117/12.436703
https://doi.org/10.1117/12.436703
Autor:
Pawitter J. S. Mangat, Zorian S. Masnyj, Eric S. Ainley, Douglas J. Resnick, Kevin J. Nordquist
Publikováno v:
SPIE Proceedings.
A negative tone, chemically amplified deep ultraviolet resist, ShipleyR UVN30, has been evaluated for use in NGL mask fabrication and direct write applications. This resist displayed excellent exposure latitude and resolution for both dense and isola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2287018ac04374004d67f4d45fd3ab09
https://doi.org/10.1117/12.390090
https://doi.org/10.1117/12.390090
Autor:
Aaron Fisher, John E. M. Goldsmith, Pawitter J. S. Mangat, S. C. Burkhart, Zorian S. Masnyj, Christopher C. Walton, Charles Cerjan, Avijit K. Ray-Chaudhuri, David P. Mancini, Seongtae Jeong, Cindy C. Larson, Gregory Frank Cardinale, Jeffrey Bokor, Guojing Zhang, Scott Daniel Hector, Bill Wilkinson, Pei-yang Yan
Publikováno v:
SPIE Proceedings.
We report on the comparison of defect printability experimental results with at-wavelength defect inspection and printability modeling at extreme ultraviolet (EUV) wavelengths. Two sets of EUV masks were fabricated with nm- scale substrate defect top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fefd26f369fee889e1f858f642c14310
https://doi.org/10.1117/12.373339
https://doi.org/10.1117/12.373339
Autor:
William J. Dauksher, David P. Mancini, D. J. Resnick, Pawitter J. S. Mangat, Zorian S. Masnyj, Kevin J. Nordquist, Jeffrey H. Baker, Eric S. Ainley, K. Gehoski
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:695
Step and flash imprint lithography (SFIL) is an attractive, low-cost method for printing sub-100 nm geometries. The imprint process is performed at low pressures and room temperature, which minimizes magnification and distortion errors. Since SFIL is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2793fac6c194da0d9c6fe21b58711611
https://doi.org/10.1116/1.1667512
https://doi.org/10.1116/1.1667512
Autor:
D. J. Resnick, E. J. Weisbrod, James R. Wasson, Bing Lu, Pawitter J. S. Mangat, Zorian S. Masnyj, Kevin J. Nordquist
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:3029
Proximity effects and resist heating during high energy electron-beam (e-beam) patterning of extreme ultraviolet lithography (EUVL) mask were investigated for the 50 nm node and beyond. These effects were observed experimentally on both silicon wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081cb2cc693a0e38fd71f024a633ac5d
https://doi.org/10.1116/1.1521745
https://doi.org/10.1116/1.1521745
Autor:
Gregory R. Bogart, Myrtle I. Blakey, David P. Mancini, D. J. Resnick, K. H. Smith, S.-I. Han, Michael J. Lercel, William J. Dauksher, James Alexander Liddle, Leonidas E. Ocola, Michael J. Trybendis, Richard J. Kasica, C. G. Caminos, Chris Magg, Kevin W. Collins, Anthony E. Novembre, Chester S. Knurek, Pawitter J. S. Mangat, Zorian S. Masnyj, R. Jeffer, Milton L. Peabody, K. Teffeau, Reginald C. Farrow, L. Rutberg, N. Cadwell, R. F. Fullowan
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2659
Methods for correcting pattern placement errors found on SCALPEL™ masks are addressed. The methodology and implementation of individual membrane image placement correction is presented, showing its advantages over the global image placement correct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d5c978f081a7af5c4cb44cb491b05b
https://doi.org/10.1116/1.1412891
https://doi.org/10.1116/1.1412891
Autor:
Pawitter J. S. Mangat, S.-I. Han, Zorian S. Masnyj, S. B. Clemens, D. J. Resnick, N. M. Bergmann, William J. Dauksher, James R. Wasson, D. L. Standfast
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3232
Optimized etch processes for the pattern transfer of TaSiN-based SCALPEL and extreme ultraviolet lithography masks have been developed. For controllability, the etch rate is very commensurate with the pattern transfer of thin films, about 140 A/min.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b85d27c457001c401aeb3d268ac3df
https://doi.org/10.1116/1.1313575
https://doi.org/10.1116/1.1313575