Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Zoran Prijić"'
Autor:
Danijel Danković, Miloš Marjanović, Nikola Mitrović, Emilija Živanović, Milan Danković, Aneta Prijić, Zoran Prijić
Publikováno v:
IEEE Transactions on Education. 66:146-155
Autor:
Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Srboljub Stanković, Marko Andjelković, Zoran Prijić, Ivica Manić, Aneta Prijić, Goran Ristić, Danijel Danković
Publikováno v:
Journal of Circuits, Systems and Computers. 31
In this paper, the effects of successively applied static/pulsed negative bias temperature (NBT) stress and irradiation on commercial p-channel power vertical double-diffused metal-oxide semiconductor (VDMOS) transistors are investigated. To further
Publikováno v:
Ceramics International
The effect of Nb on the microstructure and dielectric properties of BaTiO3 ceramics was investigated. The Nb/Mn–BaTiO3 ceramics were prepared using a conventional solid-state method. The concentration of Nb varied from 0.1 to 5.0 at% but Mn was fix
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:204-213
This paper studies negative bias temperature instability in commercial IRF9520 p-channel power VDMOSFETs under both static and pulsed bias stress conditions in order to model this effect. The pulsed voltage stressing caused generally lower shifts as
Autor:
Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Đorić Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković
Publikováno v:
Book of Abstracts.
Autor:
Danijel Dankovic, Snežana Golubović, S. Djoric-Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Albena Paskaleva, Zoran Prijić, D. Spassov, Sandra Veljković
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This paper studies negative bias temperature instabilities in commercial IRF9520 p-channel power VDMOSFETs. Effects of these instabilities were extensively investigated under static and pulsed stressing conditions for various temperatures and voltage
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
The effects of Nb/Mn and La/Mn on the electrical properties of doped BaTiO3 ceramics were investigated in this paper. A series of Nb/Mn and La/Mn-doped BaTiO3 samples, with dopant concentrations, ranged from 0.1 up to 2 at% of La and Nb, were prepare
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
The procedure for creation of the SPICE compatible spatial equivalent circuit model of the heatsink is presented in this paper. The model is based on the electro-thermal analogy and finite volume partitioning approach. It is validated by comparing th
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 32:179-193
Donor/acceptor (La/Mn) doped BaTiO3 ceramics, sintered at different temperatures, were studied regarding their microstructure and dielectric properties as well as the dielectric response in a ferroelectric/paraelectric regime. The concentrations of L
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 32:539-554
Many sensors exhibit nonlinear dependence between their input and output variables and specific techniques are often applied for the linearization of their transfer characteristics. Some of them include additional analog circuits, while the others ar