Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Zongzhe Cheng"'
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089901-089901-1 (2023)
Externí odkaz:
https://doaj.org/article/8e4120a89cab4f599e0288bb847c1c7b
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111110-111110-10 (2021)
In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources but is enhanced by several orders of magnitude for low source temperatures. Using line-of
Externí odkaz:
https://doaj.org/article/aaaefc0d72a84e28b136b876393218d9
We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer–Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of contin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67ddc53772cd50938b23578e670f682a
Autor:
Florian Huber, Alfred Plettl, Marian Caliebe, Klaus Thonke, Yisong Han, Colin J. Humphreys, Sebastian Bauer, Zongzhe Cheng, Tobias Meisch, Dominik Heinz, Sushil Tandukar, Ferdinand Scholz, Matthias Hocker
Publikováno v:
Journal of Crystal Growth. 440:69-75
In this article, the influence of the trench period and depth of pre-structured r-plane sapphire substrates on the metalorganic vapor phase epitaxy (MOVPE) growth of ( 11 2 ¯ 2 ) GaN is investigated. We found that a larger trench period is beneficia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021fef0f4a3767635dcc012dcf4f5248
https://doi.org/10.1016/j.jcrysgro.2016.01.014
https://doi.org/10.1016/j.jcrysgro.2016.01.014
Publikováno v:
Nanotechnology. 29(39)
This work focuses on homoepitaxial growth of β-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0494cfdbf770d408ab0b173399a86dc0
https://pubmed.ncbi.nlm.nih.gov/29985160
https://pubmed.ncbi.nlm.nih.gov/29985160
Autor:
Achim Trampert, Michael Hanke, Zongzhe Cheng, Maik Kahnt, Christian G. Schroer, Andreas Waag, Lars Nicolai, Hergo-Heinrich Wehmann, Gerald Falkenberg, Hao Zhou, Michael Niehle, Jana Hartmann, Thilo Krause
Publikováno v:
Physical Review Applied. 7
Nanofocus x-ray diffraction is used to investigate the structure and local strain field of an isolated ðIn; GaÞN=GaN core-shell microrod. Because the high spatial resolution of the x-ray beam is only 80 × 90 nm2, we are able to investigate several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73200e7c4e71e753e8904d7192ecb986
https://doi.org/10.1103/physrevapplied.7.024033
https://doi.org/10.1103/physrevapplied.7.024033
Publikováno v:
Applied Physics Letters. 113:182102
The anisotropic coefficient of thermal expansion for single-crystalline monoclinic β-Ga2O3 has been precisely measured by synchrotron-based high resolution x-ray diffraction in the temperature range from 298 to 1200 K. We derived values along the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1319d5683f21463c9d01e345905b431c
https://doi.org/10.1063/1.5054265
https://doi.org/10.1063/1.5054265
Publikováno v:
Nanotechnology. 29:395705
This work focuses on homoepitaxial growth of β-Ga2O3 on (100)-oriented substrates during molecular beam epitaxy. It provides a comprehensive study on the growth mode by combining in situ with ex situ tools. In situ reflection high-energy electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::963ef5809cc14aa364b5ad99ca25cca9
https://doi.org/10.1088/1361-6528/aad21b
https://doi.org/10.1088/1361-6528/aad21b
Publikováno v:
Applied Physics Letters. 111:162104
Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46fa05a174a89d0c947a4a563f18e0ba
https://doi.org/10.1063/1.4998804
https://doi.org/10.1063/1.4998804
Autor:
Manfred Burghammer, Martin Rosenthal, Hao Zhou, Hergo-Heinrich Wehmann, Michael Niehle, Achim Trampert, Michael Hanke, Zongzhe Cheng, Johannes Ledig, Andreas Waag, Thilo Krause, Jana Hartmann
Publikováno v:
Nanotechnology. 27:325707
Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core-shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39c14df2a9175db8ddcb6fa415ad609c
https://doi.org/10.1088/0957-4484/27/32/325707
https://doi.org/10.1088/0957-4484/27/32/325707