Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Zongwei Xu"'
Publikováno v:
Nanotechnology and Precision Engineering, Vol 7, Iss 3, Pp 033007-033007-8 (2024)
Nitrogen vacancy (NV) color centers in diamond have useful applications in quantum sensing and fluorescent marking. They can be generated experimentally by ion implantation, femtosecond lasers, and chemical vapor deposition. However, there is a lack
Externí odkaz:
https://doaj.org/article/88dcf5d52eb442aca1640acb5ce05707
Publikováno v:
Micromachines, Vol 15, Iss 8, p 999 (2024)
The preparation method of transmission electron microscopy (TEM) samples for pure zirconium was successfully executed using a focused ion beam (FIB) system. These samples unveiled artifact hydrides induced during the FIB sample preparation process, w
Externí odkaz:
https://doaj.org/article/c33033863ea44ec6bfcacf1a84ea3d94
Publikováno v:
Journal of King Saud University: Science, Vol 34, Iss 4, Pp 102048- (2022)
A counting problem on lattice points in n-dimensional space with rectangular coordinate system was considered. Lattice points are all the points having integer coordinates. The distances of these lattice points to the origin O are denoted from small
Externí odkaz:
https://doaj.org/article/fcaf68e56e3e4356a70bd98692f265f9
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
Autor:
Xiuhong Wang, Junlei Zhao, Zongwei Xu, Flyura Djurabekova, Mathias Rommel, Ying Song, Fengzhou Fang
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 211-217 (2020)
As a promising material for quantum technology, silicon carbide (SiC) has attracted great interest in materials science. Carbon vacancy is a dominant defect in 4H-SiC. Thus, understanding the properties of this defect is critical to its application,
Externí odkaz:
https://doaj.org/article/5cb81999a23743cf8146eea7020070af
Autor:
Jiayu Liu, Zongwei Xu, Ying Song, Hong Wang, Bing Dong, Shaobei Li, Jia Ren, Qiang Li, Mathias Rommel, Xinhua Gu, Bowen Liu, Minglie Hu, Fengzhou Fang
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 218-228 (2020)
Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually
Externí odkaz:
https://doaj.org/article/60e953c2f1514ca8830c508eb37920e8
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 2, Pp 81-87 (2020)
To investigate the effect of dislocation structures on the initial formation stage of helium bubbles, molecular dynamics (MD) simulations were used in this study. The retention rate and distribution of helium ions with 2 keV energy implanted into sil
Externí odkaz:
https://doaj.org/article/1dd2a1021e26458d80d0ebdae083cdc1
Autor:
Xiuhong Wang, Zongwei Xu, Mathias Rommel, Bing Dong, Le Song, Clarence Augustine TH Tee, Fengzhou Fang
Publikováno v:
Nanotechnology and Precision Engineering, Vol 2, Iss 4, Pp 157-162 (2019)
Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4H-SiC after high-temperature annealing were studied using electron parama
Externí odkaz:
https://doaj.org/article/982014843e824e9db3554bc7a8bc337e
Publikováno v:
Nanotechnology and Precision Engineering, Vol 4, Iss 4, Pp 043004-043004-8 (2021)
Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure. It also has a number of practical applications in evaluating food safety, medicine, and forensics. The Raman spect
Externí odkaz:
https://doaj.org/article/d6aedd09fa654dbd8066927ae64d2197
Publikováno v:
Nanotechnology and Precision Engineering, Vol 4, Iss 2, Pp 023002-023002-11 (2021)
As an important wide-bandgap semiconductor, gallium nitride (GaN) has attracted considerable attention. This paper describes the use of confocal Raman spectroscopy to characterize undoped GaN, n-type GaN, and p-type GaN through depth profiling using
Externí odkaz:
https://doaj.org/article/5dbc8510e4fb469ab4118971e5dec1ed
Publikováno v:
Nanotechnology and Precision Engineering, Vol 2, Iss 1, Pp 35-39 (2019)
Annealing nanodiamonds (ND) at high temperatures up to 1700 °C is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' potential in the field of tribology and
Externí odkaz:
https://doaj.org/article/82730abdf8ee4f018bc877e19bcba406