Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zonglong Yang"'
Publikováno v:
Meikuang Anquan, Vol 51, Iss 2, Pp 202-207, 212 (2020)
In view of theoretical analysis and numerical simulation, the distribution characteristics of stress field, displacement field and plastic zone in the middle lane affected by mining are studied. The distribution law of plastic zone, stress field and
Externí odkaz:
https://doaj.org/article/a437208e42e24376b0e7bee2b2c98d3d
Autor:
Fahima Ali-Rachedi, John W. Goodby, Stéphane Chambert, Edward J. Davis, Laurent Soulère, Mohammed Ahmar, Nuno M. Xavier, Zonglong Yang, Yves Queneau, Rui Xu, Stephen J. Cowling, Grahame Mackenzie
Publikováno v:
Liquid Crystals
Liquid Crystals, Taylor & Francis, 2017, pp.1-19. ⟨10.1080/02678292.2017.1346211⟩
Liquid Crystals, Taylor & Francis, 2017, pp.1-19. ⟨10.1080/02678292.2017.1346211⟩
As part of our studies on glycolipidic liquid crystals, we have investigated some molecules comprising a steroid moiety. These systems can exhibit several types of structures depending on their polarity pattern based on the number of polar and non-po
Autor:
Zonglong, Yang
Les acyl stéryl glycosides (ASGs) appartiennent à une famille de glycolipides qui possèdent un caractère amphiphile particulier dû à la présence de deux parties hydrophobes, un stéroïde et une chaine grasse. Dans le cadre de nos études des
Externí odkaz:
http://www.theses.fr/2018LYSEI041
Publikováno v:
2017 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific).
The switching frequency of power inverters among the traditional motor drive systems are almost between 4kHz to 20kHz. The appearance of SiC or GaN devices make it is possible to increase the switching frequency for improving the performance of power
Autor:
Zonglong, Yang, 楊宗龍
88
The temperature dependence of the near band-edge critical points transitions of GaNxAs1-x (0≤x≤0.023 and x=1) samples has been studied by using piezoreflectance and photoreflectance. For samples with x≤0.0053, both the fundamental band
The temperature dependence of the near band-edge critical points transitions of GaNxAs1-x (0≤x≤0.023 and x=1) samples has been studied by using piezoreflectance and photoreflectance. For samples with x≤0.0053, both the fundamental band
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26713776358304302435