Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Zongjian Chen"'
Publikováno v:
Journal of Management and Humanity Research. :15-37
With the popularization of mobile Internet and the improvement of streaming media technology, live streaming marketing has become a popular marketing method. In China, live stream marketing helped e-commerce merchants earn more than 100 billion yuan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fdc4871eb82b44a0d02e71f5f954ab5
https://doi.org/10.22457/jmhr.v07a022238
https://doi.org/10.22457/jmhr.v07a022238
Publikováno v:
Medical Physics. 48:7891-7899
Purpose This study aimed to explore the predictive ability of deep learning (DL) for the common epidermal growth factor receptor (EGFR) mutation subtypes in patients with lung adenocarcinoma. Methods A total of 665 patients with lung adenocarcinoma (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4cc96199c3a7cd6f2a5456ccbb60fd4
https://doi.org/10.1002/mp.15307
https://doi.org/10.1002/mp.15307
Autor:
Mailin Gan, Xinquan Chen, Zongjian Chen, Lei Chen, Shunhua Zhang, Ye Zhao, Lili Niu, Xuewei Li, Linyuan Shen, Li Zhu
Publikováno v:
Nutrients; Volume 14; Issue 8; Pages: 1551
Genistein is an isoflavone phytoestrogen that has been shown to improve obesity; however, the underlying molecular mechanisms involved therein have not been clearly elucidated. In this study, we administered genistein to high-fat diet-induced obese m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07fc803c020777fc36f0f1024fb05719
https://doi.org/10.3390/nu14081551
https://doi.org/10.3390/nu14081551
Autor:
G. Yiu, M. Pearce, Daniel C. Murray, Robert Rogenmoser, Dongwook Suh, Zongjian Chen, S. Nishimoto, D. Rodriguez, V. von Kaenel, E. Supnet, M. Oyker
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1857-1865
The load/store pipe for a low-power 1-GHz embedded processor is described. For area savings and logic complexity reduction, the load/store pipe is clocked at twice the frequency of the processor core. It can sustain two load or store operations per c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa174e9c105904d3d6f041efcc9ed15d
https://doi.org/10.1109/jssc.2003.818296
https://doi.org/10.1109/jssc.2003.818296
Autor:
Zongjian Chen, Vincent von Kaenel, Jason Kassoff, Fabian Klass, Weichun Ku, Tony Li, Jonathon Lin, Khurram Malik, Anup Mehta, Dan Murray, Eric Shiu, Priya Ananthanarayanan, Chris Shuler, Sribalan Santhanam, Greg Scott, Junji Sugisawa, Toshinari Takayanagi, Honkai John Tam, Pradeep Trivedi, James Wang, Ricky Wen, John Yong, Sukalpa Biswas, Brian Campbell, Hao Chen, Shailendra Desai, Shaishav Desai, Dominic Go, Rajat Goel
Publikováno v:
ISSCC
An SoC is presented with dual 2GHz Powertrade cores, coherent crossbar interconnect, 2MB L2 cache, and memory and I/O subsystem. The chip consumes a maximum of 25W of power. The 115mm2 die is implemented in a 65nm 8M process with low-power design tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d28527a5d5a46ec1de4889bce0cd57
https://doi.org/10.1109/isscc.2007.373609
https://doi.org/10.1109/isscc.2007.373609
Autor:
G. Yiu, D. Murrray, D. Rodriguez, Dongwook Suh, Zongjian Chen, E. Supnet, M. Pearce, Robert Rogenmoser, S. Nishinnoto, M. Oyker
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbabe7c5459206ad9a1e317d041aa3df
https://doi.org/10.1109/isscc.2003.1234325
https://doi.org/10.1109/isscc.2003.1234325
Publikováno v:
Proceedings. IEEE International SOI Conference.
There have been several papers on threshold voltage models for fully depleted SOI NMOS devices. The particular case of the fully depleted SOI MOSFET under negative substrate bias has been discussed previously. However all the discussion so far has de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84be1d3281d3c0e0107b7b3003acb5c4
https://doi.org/10.1109/soi.1994.514233
https://doi.org/10.1109/soi.1994.514233
Publikováno v:
Proceedings of 1994 IEEE Symposium on Low Power Electronics.
This paper reports the scaling guidelines for CMOS technologies optimized for supply voltages lower than standard values in low power applications. The optimum device structures for several lithographic generations targeted for common supply voltages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57aa41a6a20e4cd125cb51f15d983357
https://doi.org/10.1109/lpe.1994.573201
https://doi.org/10.1109/lpe.1994.573201
Autor:
Zongjian Chen, James D. Plummer
Publikováno v:
1995 IEEE Symposium on Low Power Electronics. Digest of Technical Papers.
Low threshold voltage, high performance, quarter micron N/P MOSFETs for 1 V applications were fabricated. A 4.5/spl times/ reduction in switching power with the same switching speed was achieved, when compared with standard Vt devices operated at a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd66e9c5b1f0c0b0b133b0b870edb6e2
https://doi.org/10.1109/lpe.1995.482471
https://doi.org/10.1109/lpe.1995.482471
Publikováno v:
Proceedings of International Electron Devices Meeting.
A case study of MOSFET technology optimization for low voltage (1 V), low power applications is presented. Technology parameters (threshold voltage, oxide thickness) were optimized for power and speed with the consideration of balancing switching pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fca153c553cf04558ca42791e33c86ce
https://doi.org/10.1109/iedm.1995.497183
https://doi.org/10.1109/iedm.1995.497183