Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Zongchang Yu"'
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c07bbfc4fc3731acc46cf0788c91a2e
https://doi.org/10.1117/12.2656632
https://doi.org/10.1117/12.2656632
Autor:
Junwei Lu, Seung-Hoon Park, Kyung Kang, Stefan Hunsche, Yu Cao, Fei Du, John Barbuto, Zongchang Yu, Zhengfan Zhang, Chris Park, Jong-Ho Lim, Wenjin Shao, Sung-Man Kim, Venu Vellanki, Ronald Goossens
Publikováno v:
SPIE Proceedings.
Proximity matching is a common activity in the wafer fabs 1,2,3 for purposes such as process transfer, capacity expansion, improved scanner yield and fab productivity. The requirements on matching accuracy also become more and more stringent as CD er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37463625fe6e0bdea8b0769ca757e80
https://doi.org/10.1117/12.881680
https://doi.org/10.1117/12.881680
Publikováno v:
SPIE Proceedings.
At 65nm technology node and below, with the ever-smaller process window, it is no longer sufficient to apply traditional model-based verification at only the nominal condition. Full-chip, full process-window verification has started to integrate into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84716ef516f085c46d0bbf8ecdfb892
https://doi.org/10.1117/12.747022
https://doi.org/10.1117/12.747022
Autor:
Christopher J. Progler, Patrick M. Martin, Zongchang Yu, Rick Gray, Bryan S. Kasprowicz, Young-Mog Ham, James N. Wiley, Jun Ye
Publikováno v:
SPIE Proceedings.
Lithography simulation is an integral part of semiconductor manufacturing. It is not only required in lithography process development, but also in RET design, RET verification, and process latitude analysis, from library cells to full-chip tape out.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d6897cf27b6cf7654e4a9de64024a3
https://doi.org/10.1117/12.617366
https://doi.org/10.1117/12.617366
Autor:
Carl Hess, Wayne Ruch, Zongchang Yu, Z. Mark Ma, Lisa Fisher, William Volk, Weimin Ma, Carl Albert Vickery
Publikováno v:
SPIE Proceedings.
With expected implementation of low k1 lithography on 193nm scanners for 65nm node wafer production, high resolution defect inspection will be needed to insure reticle quality and reticle manufacture process monitoring. Reticle cost and reticle defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae282b348b7217ddd5ad1b805b31f2a
https://doi.org/10.1117/12.518071
https://doi.org/10.1117/12.518071
Autor:
Yalin Xiong, Sterling G. Watson, Zhian Guo, Hector I. Garcia, Zongchang Yu, Lantian Wang, William Volk
Publikováno v:
SPIE Proceedings.
Contacts and VIAs are features whose integrity are very susceptible to reticle CD defects or in general, to defects that produce a change of total energy (flux) projected through the reticle. As lithography is extended beyond the 130nm node, the prob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f41de04cf4f6f4677901b1aa11d3323
https://doi.org/10.1117/12.504577
https://doi.org/10.1117/12.504577
Publikováno v:
SPIE Proceedings.
For alternating aperture phase shift masks (AAPSM) and 193 nm (ArF) lithography, we have simulated defect printability using inspection images and software-based modeling. Masks were fabricated by DuPont Photomasks with programmed defects of known si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe153ce92c4dafd6cd05faf919d64a6
https://doi.org/10.1117/12.468205
https://doi.org/10.1117/12.468205
Autor:
Lantian Wang, Yalin Xiong, Zhian Guo, Sterling G. Watson, Hector I. Garcia, Zongchang Yu, William Volk
Publikováno v:
SPIE Proceedings.
With growing implementation of low k1 lithography on DUV scanners for wafer production, detecting and analyzing photomask critical dimension (CD) errors and semitransparent defects is vital for qualifying photomasks to enable high IC wafer yields for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fbd66d1bcdf90955abf191939ba2272
https://doi.org/10.1117/12.468207
https://doi.org/10.1117/12.468207
Autor:
Paul van Adrichem, Fei Du, Youri van Dommelen, Rafael Aldana, Keith Gronlund, Roel Knops, Robert John Socha, Henry Meggens, Ronald Goossens, Venu Vellanki, Justin Gau, Dorothe Oorschot, Stephen Hsu, Koen Schreel, Wenjin Shao, Liesbeth Reijnen, Luoqi Chen, Zongchang Yu, Xu Xie
Publikováno v:
Japanese Journal of Applied Physics. 50:06GB01
FlexRay programmable illumination and LithoTuner software is combined in several use cases. The first use case is source mask optimization (SMO) in which the process window is maximized for a static random access memory (SRAM) design. In a 55 nm half
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4de61f7ee2460746ea7e366a07724c72
https://doi.org/10.1143/jjap.50.06gb01
https://doi.org/10.1143/jjap.50.06gb01