Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Zongbei Dai"'
Publikováno v:
Heliyon, Vol 10, Iss 4, Pp e26429- (2024)
The presence of missing data is a significant data quality issue that negatively impacts the accuracy and reliability of data analysis. This issue is especially relevant in the context of accelerated tests, particularly for step-stress accelerated de
Externí odkaz:
https://doaj.org/article/e13f9f2dc800435d85eeefa851d8f720
Autor:
Chao Li, Haili Song, Zongbei Dai, Zhenbo Zhao, Chengyan Liu, Hengquan Yang, Chengqiang Cui, Lei Miao
Publikováno v:
Materials, Vol 15, Iss 2, p 406 (2022)
Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity resul
Externí odkaz:
https://doaj.org/article/ed20debcb042496580707dbe2d5cd635
The Mechanical Properties and Elastic Anisotropies of Cubic Ni3Al from First Principles Calculations
Publikováno v:
Crystals, Vol 8, Iss 8, p 307 (2018)
Ni3Al-based superalloys have excellent mechanical properties which have been widely used in civilian and military fields. In this study, the mechanical properties of the face-centred cubic structure Ni3Al were investigated by a first principles study
Externí odkaz:
https://doaj.org/article/2f1affb40e7140b5920de07f0294bc64
The effect of cyclic thermal loading rate on the mechanical behavior of micro-bumps in CoWoS package
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
International Conference on Mechanical Engineering, Measurement Control, and Instrumentation.
As high-power semiconductor devices, IGBTs are widely used in electrical power application, the reliability of which have been paid attention by both manufacturers and end users. The defects of IGBTs on the hierarchy of die, which could be originated
Publikováno v:
2021 22nd International Conference on Electronic Packaging Technology (ICEPT).
Due to the existence of anisotropy, the previous isotropic assumption of silicon-based materials can no longer accurately characterize the mechanical behavior of materials. In this study, finite element analysis (FE A) method was adopted to research
Publikováno v:
2021 22nd International Conference on Electronic Packaging Technology (ICEPT).
In this paper, the mechanical properties of Cu 3 Si were researched by the first-principles method. And the method based on density functional theory (DFT). The exchange correlation energy function adopts the generalized gradient approximation (GGA).