Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Zon Huang Lan"'
Autor:
Chung-Yuan Mou, Li-Chyong Chen, Kuei-Hsien Chen, Hsu Chih-Wei, Ying-Jay Yang, Chia Chun Chen, Chin Kuei Kuo, Chien Ting Wu, Zon Huang Lan
Publikováno v:
Nanotechnology. 17:S332-S337
We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si s
Autor:
Surojit Chattopadhyay, Kuei-Hsien Chen, Chia-Fu Chen, Zon Huang Lan, Shih Chen Shi, Li-Chyong Chen
Publikováno v:
Advanced Functional Materials. 15:781-786
Single-crystalline, hexagonal aluminum nitride nanotips are fabricated using a vapor-transport and condensation process (VTCP) on silicon substrates with or without a catalyst layer. The resultant tips have very sharp nanoscale apexes (∼1 nm). whil
Autor:
Zon Huang Lan, Reui-San Chen, Kuei-Hsien Chen, Ying-Sheng Huang, Dah-Shyang Tsai, S. Chattopadhyay, Chien Ting Wu
Publikováno v:
Chemistry of Materials. 16:2457-2462
Self-assembled and well-aligned IrO2 nanotubes have been grown on LiTaO3 (LTO) (012) substrates via metal-organic chemical vapor deposition (MOCVD), using (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) as the source reagent. The surface morph
Autor:
Huang Min Lin, Li-Chyong Chen, Kuei-Hsien Chen, Hsu Chih-Wei, Chia Chun Chen, Sandip Dhara, Chien Ting Wu, Zon Huang Lan, Chi Hui Liang
Publikováno v:
Advanced Functional Materials. 14:233-237
The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understandi
Autor:
Yang-Fang Chen, Li-Chyong Chen, H. M. Lin, Zon Huang Lan, A. Datta, Yuh-Lin Wang, Kuei-Hsien Chen, Chia Chun Chen, C. W. Hsu, Chien Ting Wu, Sandip Dhara
Publikováno v:
Applied Physics Letters. 84:3486-3488
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is ob
Autor:
Li-Chyong Chen, H. M. Lin, Kuei-Hsien Chen, Chia Chun Chen, A. Datta, Chien Ting Wu, Chi Wei Hsu, Yuh-Lin Wang, Sandip Dhara, Zon Huang Lan
Publikováno v:
Applied Physics Letters. 82:451-453
Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga+ focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike h
Autor:
Jingyu Lin, Kuei-Hsien Chen, Chia Hao Chen, Hongxing Jiang, L. C. Chen, Zon Huang Lan, Yang-Fang Chen
Publikováno v:
Applied Physics Letters. 80:1397-1399
We report firm evidence for the underlying mechanism of the enhanced luminescence in InxAlyGa1−x−yN quaternary epilayers. Photoluminescence, Raman scattering, field emission scanning electron microscopy (SEM), energy dispersive x-ray spectrometry
Autor:
Jeff T. H. Tsai, Chien Ting Wu, Reui-San Chen, Li-Chyong Chen, Shiao Wen Wang, Kuei-Hsien Chen, Chia Chun Chen, Ying-Sheng Huang, Zon Huang Lan
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 4(7)
In the last two decades, a wide range of semiconductor nanowires have been synthesized and used as building blocks for the development of a new generation of electronic and optoelectronic devices. [1–8] The integration of these nanowires into the t
Autor:
Kuei-Hsien Chen, Surojit Chattopadhyay, Shih Chen Shi, Chia-Fu Chen, Zon Huang Lan, Li-Chyong Chen
Publikováno v:
Journal of the American Chemical Society. 127(9)
A fully plasma-based technique of generating ultrafine (sub-10-nm) nanocrystalline silver particulates on wide band gap and chemically inert hexagonal aluminum nitride nanorod templates has been demonstrated. These specially prepared substrates are r
Autor:
Anindya Datta, Chien Ting Wu, Li-Chyong Chen, Zon-Huang Lan, Kuei-Hsien Chen, Yuh-Lin Wang, Chia Chun Chen, C. H. Shen, Sandip Dhara, Chi-We Hsu
Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3591b29775d3510311d65309314fc61