Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Zoilo C. H. Tan"'
1
Potential of DNQ/novolac and chemically amplified resists for 100 nm device generation maskmaking
Autor: Phuong Le, Zoilo C. H. Tan, Tom Coleman
Publikováno v: Microelectronic Engineering. :531-538
An i -line optical resist based on diazonaphthoquinone (DNQ)/novolac chemistry and a chemically amplified resist (CAR) were evaluated for maskmaking application in the 100 nm device generation. By using an optimized developer with a multiple-interrup
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6208c1f8504c19c1862293a1023de733
https://doi.org/10.1016/s0167-9317(01)00500-7
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2
Evaluation of DNQ/novolac resists for 130 nm device maskmaking
Autor: Phuong Le, Zoilo C. H. Tan, Homer Lem
Publikováno v: Microelectronic Engineering. :315-318
Several optical resists based on diazonaphthoquinone(DNQ)/novolac chemistry were evaluated for maskmaking application in the 130 nm device generation. Initial screening was performed at 10 kV with additional optimization at 50 kV. To enhance the elec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32a09316a8828d745df5c820446615d2
https://doi.org/10.1016/s0167-9317(98)00072-0
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3
Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography
Autor: Nikos Glezos, George P. Patsis, E. Tegou, Kim Y. Lee, Phuong Le, Evangelos Gogolides, Panagiotis Argitis, Yautzong Hsu, Ioannis Raptis, Michael Hatzakis, Zoilo C. H. Tan
Publikováno v: Advances in Resist Technology and Processing XVII.
An epoxidized novolac resist (EPR) has been evaluated for high resolution negative and positive tone electron beam lithography. EPR is a chemically amplified experimental resist developed in 'Demokritos' for e-beam lithography. It is characterized by
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::087408589d3ecb8c1c62e6c8d5100bb6
https://doi.org/10.1117/12.388283
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4
Evaluation of commercial and experimental resist materials for use in MEBES mask making
Autor: Charles A. Sauer, Anne Rudack, Robert L. Dean, Etsuya Morita, Sid P. Duttagupta, Zoilo C. H. Tan, Bruce W. Smith, Dale E. Ewbank
Publikováno v: SPIE Proceedings.
The SIA roadmap has identified CD control as a critical issue in mask making. PBS, the most popular resist used for electron-beam mask making in the U.S., may not perform at the level required for production of 250 nm devices. There is a need in the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61ede0d4666906d359a1d2fc46b610cc
https://doi.org/10.1117/12.228215
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5
Process optimization of a positive-tone chemically amplified resist for 0.25-um lithography using a vector scan e-beam tool
Autor: Ranee W. Kwong, Wu-Song Huang, Zoilo C. H. Tan, Ahmad D. Katnani, Charles A. Sauer, Dominic J. Schepis
Publikováno v: SPIE Proceedings.
Electron-beam (e-beam) lithography is one technique that offers subquarter micron resolution. Advancements in tool design and resist materials make it possible to print nanometer structures. In this paper, we focus on the process optimization of an e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50f8b4df9e0550fc616d91a1c5efad39
https://doi.org/10.1117/12.210374
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6
0.25-μm lithography using a 50-kV shaped electron-beam vector scan system
Autor: Zoilo C. H. Tan, Terry Mulera, C. Nurmi, Mark A. Gesley, J. Radley, Allan L. Sagle, Lee H. Veneklasen, Keith P. Standiford, John R. Thomas
Publikováno v: SPIE Proceedings.
Performance data from a prototype 50 kV shaped electron-beam (e-beam) pattern generator is presented. This technology development is targeted towards 180-130 nm device design rules. It will be able to handle 1X NIST X-ray membranes, glass reduction r
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::830734a21c70e03db248532374cd0e41
https://doi.org/10.1117/12.209157
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7
Application of charge-dissipation material in MEBES phase-shift mask fabrication
Autor: Zoilo C. H. Tan, Charles A. Sauer
Publikováno v: SPIE Proceedings.
Several charge dissipation materials were evaluated for their ability to improve the overlay accuracy during phase shift mask (PSM) registered writing on a MEBES system. These included an organic conductive polymer and a number of thin inorganic film
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::561a8e39d9494b2f0f7a1736773115ba
https://doi.org/10.1117/12.195834
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8
E-beam direct write of rectangular and mushroom gates for GaAs FETs
Autor: Zoilo C. H. Tan, Scott E. Silverman
Publikováno v: SPIE Proceedings.
Electron-beam lithography was used to fabricate half-micron, quarter-micron and sub-quartermicron gates for MMIC applications. Both rectangular and mushroom gates were used. This paper describes our experience in the fabrication of various gates, wit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc76ce82263304df7c9ce942e25cf17c
https://doi.org/10.1117/12.20161
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9
Evaluation of poly(allyl methacrylate)-co-(hydroxyethyl methacrylate) as negative electron-beam resist
Autor: Zoilo C. H. Tan, Sharon S. Georgia
Publikováno v: Polymer Engineering and Science. 23:963-967
Poly(allyl methacrylate)-co-(hydroxyethyl methacrylate) has been evaluated as a high-sensitivity, high-resolution, high temperature-resistant negative electron resist. The effects of molecular weight and polydispersity of the copolymer on its lithogr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ed0f3c42fed1a3f196d3db6b32f6101
https://doi.org/10.1002/pen.760231709
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