Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zohreh Mosahebfard"'
Autor:
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, Virginia Boix, Foqia Rehman, Zohreh Mosahebfard, Erik Lind, Joachim Schnadt, Rainer Timm
Publikováno v:
Faraday Discussions. 236:71-85
In situ and time-resolved APXPS reveals the initial ALD process beyond the standard ligand exchange model, resulting in native oxide-free InAs/HfO2 interfaces for high-speed MOSFET.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d59b5bd3901ba23702c84c69e10e0f
https://doi.org/10.1039/d1fd00116g
https://doi.org/10.1039/d1fd00116g
Autor:
Giulio D'Acunto, Payam Shayesteh, Esko Kokkonen, Virginia Boix de la Cruz, Foqia Rehman, Zohreh Mosahebfard, Erik Lind, Joachim Schnadt, Rainer Timm
Publikováno v:
Surfaces and Interfaces. 39:102927
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ec3cd3f9ca31a33ac496b186c2d1a2
https://doi.org/10.1016/j.surfin.2023.102927
https://doi.org/10.1016/j.surfin.2023.102927
Autor:
Giulio, D'Acunto, Esko, Kokkonen, Payam, Shayesteh, Virginia, Boix, Foqia, Rehman, Zohreh, Mosahebfard, Erik, Lind, Joachim, Schnadt, Rainer, Timm
Publikováno v:
Faraday discussions. 236
Atomic layer deposition (ALD) is one of the backbones for today's electronic device fabrication. A critical property of ALD is the layer-by-layer growth, which gives rise to the atomic-scale accuracy. However, the growth rate - or growth per cycle -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::509e6188c966db8ca8fc72e3add01f05
https://pubmed.ncbi.nlm.nih.gov/35506440
https://pubmed.ncbi.nlm.nih.gov/35506440