Dynamics of cross-hatch evolution in heteroepitaxy

Autor: Rovaris, F, Zoellner, MH, Zaumseil, P, Schubert, MA, Di Gaspare, L, De Seta, M, Capellini, G, Schroeder, T, Storck, P, Haeberlen, M, Schwalb, G, Richter, C, Schülli, TU, Marzegalli, A, Montalenti, F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::e6cf18fbc5679041834caf304158e864
http://hdl.handle.net/10281/206391

Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy

Autor: Chahine GA, Zoellner MH, Richard M. I, Guha S, Reich C, Zaumseil P, Schroeder T, Schülli TU, CAPELLINI, GIOVANNI

This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3668::c3df68f6e01fbf9e50c4353a3e66b7f2
https://hdl.handle.net/11590/115327

Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy

Autor: Peter Zaumseil, Marvin Hartwig Zoellner, Christian Reich, Tobias U. Schülli, Giovanni Capellini, Ya-Hong Xie, Francesco Montalenti, Thomas Schroeder, Peter Storck, Anna Marzegalli, Maik Häberlen, Gilbert A. Chahine, Marie-Ingrid Richard

Publikováno v: ACS applied materials & interfaces, vol 7, iss 17
Zoellner, MH; Richard, MI; Chahine, GA; Zaumseil, P; Reich, C; Capellini, G; et al.(2015). Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy. ACS Applied Materials and Interfaces, 7(17), 9031-9037. doi: 10.1021/am508968b. UCLA: Retrieved from: http://www.escholarship.org/uc/item/27v653s5

Advanced semiconductor heterostructures are at the very heart of many modern technologies, including aggressively scaled complementary metal oxide semiconductor transistors for high performance computing and laser diodes for low power solid state lig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af71dbb60c8fec6d715d3baced653ef
http://hdl.handle.net/10281/110750

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.

Autor: Ryzhak D; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany., Aberl J; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria., Prado-Navarrete E; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria., Vukušić L; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria., Corley-Wiciak AA; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany., Skibitzki O; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany., Zoellner MH; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany., Schubert MA; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany., Virgilio M; Dipartimento di Fisica 'E. Fermi', Università di Pisa, Largo Pontecorvo 3, 56127 Pisa,Italy., Brehm M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria., Capellini G; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.; Dipartimento di Scienze, Università Roma Tre, V.le G. Marconi 446, 00146 Roma, Italy., Spirito D; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.

Publikováno v: Nanotechnology [Nanotechnology] 2024 Oct 07; Vol. 35 (50). Date of Electronic Publication: 2024 Oct 07.

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device.

Autor: Corley-Wiciak C; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Richter C; IKZ, Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489Berlin, Germany., Zoellner MH; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Zaitsev I; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Manganelli CL; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Zatterin E; ESRF, European Synchrotron Radiation Facility, 71, Avenue des Martyrs, CS 40220, 38043Grenoble Cedex 9, France., Schülli TU; ESRF, European Synchrotron Radiation Facility, 71, Avenue des Martyrs, CS 40220, 38043Grenoble Cedex 9, France., Corley-Wiciak AA; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Katzer J; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Reichmann F; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Klesse WM; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany., Hendrickx NW; QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJDelft, The Netherlands., Sammak A; QuTech and Netherlands Organisation for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CKDelft, The Netherlands., Veldhorst M; QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJDelft, The Netherlands., Scappucci G; QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJDelft, The Netherlands., Virgilio M; Department of Physics Enrico Fermi, Università di Pisa, Pisa56126, Italy., Capellini G; IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany.; Dipartimento di Scienze, Universita Roma Tre, Roma00146, Italy.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Jan 18; Vol. 15 (2), pp. 3119-3130. Date of Electronic Publication: 2023 Jan 04.