Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zlatan Stanojević"'
Autor:
Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa
Publikováno v:
Micromachines, Vol 15, Iss 7, p 829 (2024)
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly var
Externí odkaz:
https://doaj.org/article/1b194c5425b244549b88139d3020e5a9
Autor:
Jose Maria Gonzalez-Medina, Zlatan Stanojević, Zhaozhao Hou, Qiang Zhang, Wei Li, Jeffrei Xu, Markus Karner
Publikováno v:
Solid-State Electronics. 199:108494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a801cb81145affb5568b88a8845b8634
https://doi.org/10.1016/j.sse.2022.108494
https://doi.org/10.1016/j.sse.2022.108494
Publikováno v:
Solid-State Electronics
Highlights ► We computationally study the electronic structure of strained silicon nanowires. ► We explore the design space for nanowire devices spanned by strain and confinement. ► The device performance can be significantly improved by combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::484d93bec2a750d15bc9daf41266a349
https://pubmed.ncbi.nlm.nih.gov/23564977
https://pubmed.ncbi.nlm.nih.gov/23564977
Autor:
Josip Bobinac, Tobias Reiter, Julius Piso, Xaver Klemenschits, Oskar Baumgartner, Zlatan Stanojevic, Georg Strof, Markus Karner, Lado Filipovic
Publikováno v:
Micromachines, Vol 14, Iss 3, p 665 (2023)
It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the t
Externí odkaz:
https://doaj.org/article/4d8f0a93fc884206bf58c9edfca24fad
Autor:
Gabriela A. Rodriguez-Ruiz, Edmundo A. Gutierrez-D, L. Arturo Sarmiento-Reyes, Zlatan Stanojevic, Hans Kosina, Fernando J. Guarin, Pedro J. Garcia-R
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 2, Pp 78-84 (2015)
A numerical simulation methodology for incorporating thermo-magnetic effects on the MOSFET gate tunneling current is introduced. The methodology is based on the solution of the Schrödinger-Poisson coupled system, which allows simulating the influen
Externí odkaz:
https://doaj.org/article/766d204d753a4d96b950974102db273e