Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ziyao Lü"'
Publikováno v:
Journal of Nanobiotechnology, Vol 22, Iss 1, Pp 1-23 (2024)
Abstract Considerable attention has been directed towards exploring the potential efficacy of miR-155 in the realm of cancer immunotherapy. Elevated levels of miR-155 in dendritic cells (DCs) have been shown to enhance their maturation, migration, cy
Externí odkaz:
https://doaj.org/article/aec480274ffa476b83d78489d770db98
Publikováno v:
Chinese Optics Letters. 17:082302
In this Letter, an all-optical logic sequence generator based on two different polarization holographic gratings has been proposed and demonstrated, which has one input port and four output ports. The polarization state of input light signal determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3662a51b835d740b37cae6837748e1
https://doi.org/10.3788/col201917.082302
https://doi.org/10.3788/col201917.082302
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 5, Pp n/a-n/a (2022)
To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CM
Externí odkaz:
https://doaj.org/article/553a10f1c1f142328f21990e78b31939
Publikováno v:
International Journal of Coal Science & Technology, Vol 7, Iss 3, Pp 422-432 (2020)
Abstract This study examined an isothermal CO2 gasification of four chars prepared via two different methods, i.e., conventional and microwave-assisted pyrolysis, by the approach of thermogravimetric analysis. Physical, chemical, and structural behav
Externí odkaz:
https://doaj.org/article/de253d05604d47b39b569afef140b392
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105030-105030-7 (2019)
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance
Externí odkaz:
https://doaj.org/article/16d45c92a0634f2388e10fb8e067ee52