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Autor:
Nan Zhou, Haoran Li, Xiaobo Li, Ziwei Dang, Zongdong Sun, Shijie Deng, Junhao Li, Yong Xie, Hua Xu, Fangfang Xia, Tianyou Zhai
Publikováno v:
Small Structures, Vol 5, Iss 8, Pp n/a-n/a (2024)
Two‐dimensional (2D) intrinsic vacancy semiconductors possess great application prospects in optoelectronics fields, originating from abundant intrinsic vacancy structures and exceptional physical properties. Understanding the structure‐activity
Externí odkaz:
https://doaj.org/article/888ff3c73cc2489ca37684c1e3804187
