Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zitouni Messai"'
Publikováno v:
East European Journal of Physics, Iss 1, Pp 417-425 (2024)
This paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology. To facilitate this investigation, we first identified critical parameters
Externí odkaz:
https://doaj.org/article/1127e78e0ac2425187ed291fe1bb06e3
Autor:
Abderrahim Yousfi, Okba Saidani, Zitouni Messai, Rafik Zouache, Mohamed Meddah, Younes Belgoumri
Publikováno v:
East European Journal of Physics, Iss 4 (2023)
This paper presents a comprehensive simulation study on the influence of a triple absorber layer configuration in a perovskite-based solar cell using the SCAPS-1D software, under AM1.5 illumination. The simulated structure comprises a Cesium Tin-Germ
Externí odkaz:
https://doaj.org/article/bc028efc17e94188a45db7f36af05c00
Publikováno v:
In Journal of Science: Advanced Materials and Devices March 2019 4(1):180-187
Autor:
Saidani, Okba, Abderrahim, Yousfi, Zitouni, Messai, Sahoo, Girija Shankar, Zouache, Rafik, Mohammad, M. R., Alothman, Asma A., Mohammad, Saikh, Vimalan, M., Toki, Gazi F. I., Hossain, M. Khalid
Publikováno v:
Journal of Optics; 20240101, Issue: Preprints p1-19, 19p
Autor:
Mathias Rommel, T. H. Nouibat, Z. Ouennoughi, D. Chikouch, N. Rouag, Zitouni Messai, Lothar Frey
Publikováno v:
Microelectronics Reliability. 91:183-187
In this paper, the conduction mechanisms in MOS structures are investigated using Normalized Differential Conductance (NDC). It is shown that NDC can be applied successfully for the determination of conduction mechanism parameters in MOS devices. The
Publikováno v:
2015 4th International Conference on Electrical Engineering (ICEE).
In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al