Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Zishen Tian"'
Publikováno v:
APL Materials, Vol 12, Iss 4, Pp 041116-041116-9 (2024)
There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these
Externí odkaz:
https://doaj.org/article/d2b73a5cfd5b4edca3d5ec033cec9fee
Autor:
Jieun Kim, Abinash Kumar, Yubo Qi, Hiroyuki Takenaka, Philip J. Ryan, Derek Meyers, Jong-Woo Kim, Abel Fernandez, Zishen Tian, Andrew M. Rappe, James M. LeBeau, Lane W. Martin
Publikováno v:
Nature Physics. 18:1502-1509
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b348b2f4f0cea20aa139bee411376b
https://doi.org/10.1038/s41567-022-01773-y
https://doi.org/10.1038/s41567-022-01773-y
Autor:
Hao Pan, Zishen Tian, Megha Acharya, Xiaoxi Huang, Pravin Kavle, Hongrui Zhang, Liyan Wu, Dongfang Chen, John Carroll, Robert Scales, Cedric J. G. Meyers, Kathleen Coleman, Brendan Hanrahan, Jonathan E. Spanier, Lane W. Martin
Publikováno v:
Advanced Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71c8c9d9cd23d7039784c14b78abcc3
https://doi.org/10.1002/adma.202300257
https://doi.org/10.1002/adma.202300257
Autor:
Piush Behera, Eric Parsonnet, Fernando Gómez‐Ortiz, Vishantak Srikrishna, Peter Meisenheimer, Sandhya Susarla, Pravin Kavle, Lucas Caretta, Yongjun Wu, Zishen Tian, Abel Fernandez, Lane W. Martin, Sujit Das, Javier Junquera, Zijian Hong, Ramamoorthy Ramesh
Publikováno v:
Advanced Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0755dda82ad7ed128a8289c3c7eb09
https://doi.org/10.1002/adma.202208367
https://doi.org/10.1002/adma.202208367
Autor:
Lane W. Martin, Derek Meyers, Abinash Kumar, Gabriel Velarde, Abel Fernandez, James M. LeBeau, Philip Ryan, Jieun Kim, Jong-Woo Kim, Zishen Tian
Publikováno v:
Matter. 4:2367-2377
Summary The dynamics of polarization evolution and rotation in 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 relaxor ferroelectric thin films are studied via in operando synchrotron-based X-ray diffraction with AC electric fields. A frequency-limited suppression of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788eb3926ae06593cd6449de46eaa6d1
https://doi.org/10.1016/j.matt.2021.04.017
https://doi.org/10.1016/j.matt.2021.04.017
Autor:
Hana Uršič, Urška Gabor, Zishen Tian, Matjaž Spreitzer, Lane W. Martin, Jieun Kim, J. Belhadi, Gertjan Koster, Nina Daneu
Publikováno v:
RSC advances, vol 11, iss 3
RSC advances, 11(3), 1222-1232. Royal Society of Chemistry
RSC Advances, vol 11, iss 3
RSC advances, 11(3), 1222-1232. Royal Society of Chemistry
RSC Advances, vol 11, iss 3
Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain-structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8966970988a99aa2b7b375adc6ca5daf
https://doi.org/10.1039/d0ra10107a
https://doi.org/10.1039/d0ra10107a
Publikováno v:
Physical Review B, vol 105, iss 9
Relaxor ferroelectrics, well known for their large dielectric and piezoelectric response, are attracting growing interest in thin-film form driven by a need for miniaturized devices. Fundamental understanding and control of the performance of relaxor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c5e35285f92873e56d080169c639d97
https://doi.org/10.1103/physrevb.105.094107
https://doi.org/10.1103/physrevb.105.094107
Publikováno v:
ACS Applied Materials & Interfaces. 11:45844-45852
Biodegradable electronic devices are able to break down into benign residues after their service life, which may effectively alleviate the environmental impacts as a consequence of the proliferation of consumer electronic technology. The widespread a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3068b76c3c5d8ca8eab85a10c294046
https://doi.org/10.1021/acsami.9b14431
https://doi.org/10.1021/acsami.9b14431
Autor:
Abel Fernandez, Megha Acharya, Han‐Gyeol Lee, Jesse Schimpf, Yizhe Jiang, Djamila Lou, Zishen Tian, Lane W. Martin
Publikováno v:
Advanced Materials. 34:2108841
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::410c0c1236d3b119f6009c62bdebaa67
https://doi.org/10.1002/adma.202108841
https://doi.org/10.1002/adma.202108841
Autor:
Jamal, Belhadi, Urška, Gabor, Hana, Uršič, Nina, Daneu, Jieun, Kim, Zishen, Tian, Gertjan, Koster, Lane W, Martin, Matjaž, Spreitzer
Publikováno v:
RSC advances. 11(3)
Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain-structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::33ffd0ba101ebd9f8320e77f31c324d8
https://pubmed.ncbi.nlm.nih.gov/35424096
https://pubmed.ncbi.nlm.nih.gov/35424096