Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zine-eddine Touati"'
Publikováno v:
East European Journal of Physics, Iss 4 (2023)
This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-
Externí odkaz:
https://doaj.org/article/47e320f505104c7f93810fc76e78b4e4
Publikováno v:
In Journal of Science: Advanced Materials and Devices March 2019 4(1):180-187
Publikováno v:
2015 4th International Conference on Electrical Engineering (ICEE).
In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al