Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zine el abidine, Nacer"'
Autor:
Zine el abidine, Nacer
Pour les technologies avancées, la lithographie optique par immersion utilisant des sources 193nm atteint ses limites en termes de résolutions. Les nouvelles techniques de lithographie telles que l’Extrême UV ou l’écriture à faisceaux multip
Externí odkaz:
http://www.theses.fr/2017GREAT079/document
Autor:
Hayashi, Naoya, Kasprowicz, Bryan, Zine el abidine, Nacer, Sundermann, Frank, Yesilada, Emek, Farys, Vincent, Huguennet, Frederic, Armeanu, Ana-Maria, Bork, Ingo, Chomat, Michael, Buck, Peter, Schanen, Isabelle
Publikováno v:
SPIE Photomask Technology
SPIE Photomask Technology, Oct 2015, Monterey, United States. pp.96350W
SPIE Photomask Technology, Oct 2015, Monterey, United States. pp.96350W
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c0f66ff09884700c9eb1aa2563e00dce
https://hal.archives-ouvertes.fr/hal-02025238
https://hal.archives-ouvertes.fr/hal-02025238
Autor:
Kato, Kokoro, Zine el abidine, Nacer, Sundermann, Frank, Yesilada, Emek, Ndiaye, El Hadji Omar, Mishra, Kushlendra, Paninjath, Sankaranarayanan, Bork, Ingo, Buck, Peter, Toublan, Olivier, Schanen, Isabelle
Publikováno v:
Photomask Japan 2014
Photomask Japan 2014, Jul 2014, Yokohama, Japan. pp.925603, ⟨10.1117/12.2069977⟩
Photomask Japan 2014, Jul 2014, Yokohama, Japan. pp.925603, ⟨10.1117/12.2069977⟩
Standard OPC models consist of a physical optical model and an empirical resist model. The resist model compensates the optical model imprecision on top of modeling resist development. The optical model imprecision may result from mask topography eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea2c0b362eaf6ce0a099a40cf04a70b3
https://doi.org/10.1117/12.2069977
https://doi.org/10.1117/12.2069977
