Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Zimych A"'
Publikováno v:
Condens. Matter Phys., 2019, vol. 22, No. 1, 13702
Temperature dependencies for concentration and the Hall mobility of electrons for the $\textit{n}$-$\text{Ge} \langle \text{Sb}\rangle$ and \linebreak $\textit{n}$-$\text{Ge} \langle \text{Sb, Au}\rangle$ single crystals uniaxially deformed along the
Externí odkaz:
http://arxiv.org/abs/1903.11496
Секция 2. Радиационные эффекты в твердом теле Исследован изотермический отжиг монокристаллов n-Ge, облученных быстрыми электронами. Полу
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::4037f7171068102ed060e35a3ad88d74
http://elib.bsu.by/handle/123456789/182358
http://elib.bsu.by/handle/123456789/182358
Akademický článek
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Autor:
Piponski, Marjan, Topkoska‐Naumoska, Marina, Slaveska‐Spirevska, Irena, Miloshevska, Martina, Korobko, Dmytro, Symaniuk, Tetiana, Okeke, Vanessa Chichebem, Zimych, Andrii, Logoyda, Liliya
Publikováno v:
Journal of Separation Science; Jan2024, Vol. 47 Issue 1, p1-11, 11p
Autor:
S. V. Luniov, A. I. Zimych, P. F. Nazarchuk, S. A. Moroz, L. N. Polishchuk, V. T. Maslyuk, I. G. Megela
Publikováno v:
Âderna Fìzika ta Energetika, Vol 18, Iss 1, Pp 48-55 (2017)
Based on the decisions of electroneutrality equation and experimental results of measurements of the piezo-Hall-effect the dependences of activation energy of the deep level A-center depending on the uniaxial pressure along the crystallographic direc
Externí odkaz:
https://doaj.org/article/2ee8d183710c449cb82dafa25e49e200
Publikováno v:
Âderna Fìzika ta Energetika, Vol 17, Iss 1, Pp 47-52 (2016)
Hall effect for single crystals of n-Ge, irradiated by various streams of electrons with an energy of 10 MeV is investigated. Taking into account the experimental results, the energy spectrum of radiation defects is found and their parameters are est
Externí odkaz:
https://doaj.org/article/247ae2a008c44850b2096880cc7e4750
Publikováno v:
Condensed Matter Physics, Vol 22, Iss 1, p 13702 (2019)
Temperature dependencies for concentration and the Hall mobility of electrons for the n-Ge⟨Sb⟩ and n-Ge⟨Sb, Au⟩ single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall
Externí odkaz:
https://doaj.org/article/e2318067115f4a4ba13f0fb1588b86cb
Autor:
Luniov, S. V.1 (AUTHOR) luniovser@mail.ru, Zimych, A. I.1 (AUTHOR), Nazarchuk, P. F.1 (AUTHOR), Maslyuk, V. T.2 (AUTHOR), Megela, I. G.2 (AUTHOR)
Publikováno v:
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Nov/Dec2016, Vol. 171 Issue 11/12, p855-868. 14p.
Publikováno v:
Functional materials. 26:41-47
Isothermal annealing of n-Ge single crystals irradiated by the electron flux Ω = 5·10¹⁵ el./cm², energy of 10 MeV, has been investigated. Dependences of Hall voltage on the magnitude of the external magnetic field in the range from 0 to 0.5 T a
Publikováno v:
Eastern-European Journal of Enterprise Technologies, Vol 6, Iss 12 (96), Pp 35-42 (2018)
Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si , irradiated by diff