Zobrazeno 1 - 10
of 244
pro vyhledávání: '"Zimbone M."'
Publikováno v:
Journal of Crystal Growth Volume 519, 1 August 2019, Pages 1-6
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In t
Externí odkaz:
http://arxiv.org/abs/2001.05817
Autor:
Giannazzo, F., Greco, G., Di Franco, S., Fiorenza, P., Deretzis, I., La Magna, A., Bongiorno, C., Zimbone, M., La Via, F., Zielinski, M., Roccaforte, F.
Publikováno v:
Adv. Electron. Mater. 2019, 1901171
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However,
Externí odkaz:
http://arxiv.org/abs/1912.12326
Publikováno v:
In Thin Solid Films 30 April 2023 771
Publikováno v:
In Journal of Crystal Growth 1 August 2019 519:1-6
Autor:
Zimbone, M., Cacciato, G., Boutinguiza, M., Gulino, A., Cantarella, M., Privitera, V., Grimaldi, M.G.
Publikováno v:
In Catalysis Today 1 February 2019 321-322:146-157
Autor:
Sanzone, G., Zimbone, M., Cacciato, G., Ruffino, F., Carles, R., Privitera, V., Grimaldi, M.G.
Publikováno v:
In Superlattices and Microstructures November 2018 123:394-402
Autor:
Ruffino, F., Torrisi, V., Grillo, R., Cacciato, G., Zimbone, M., Piccitto, G., Grimaldi, M.G.
Publikováno v:
In Superlattices and Microstructures March 2017 103:28-47
Publikováno v:
In Superlattices and Microstructures December 2016 100:418-430
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures September 2016 83:215-226
Autor:
Giulietti, Danilo, Calcagno, L., Curcio, Alessandro, Cutroneo, M., Galletti, Mario, Skala, J., Torrisi, L., Zimbone, M.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 1 September 2016 829:117-120