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Exploring the therapeutic potential of Aloin: unraveling neuroprotective and anticancer mechanisms, and strategies for enhanced stability and delivery

Autor: Stefania Zimbone, Valeria Romanucci, Armando Zarrelli, Maria Laura Giuffrida, Michele F. M. Sciacca, Valeria Lanza, Tiziana Campagna, Ludovica Maugeri, Salvatore Petralia, Grazia Maria Letizia Consoli, Giovanni Di Fabio, Danilo Milardi

Publikováno v: Scientific Reports, Vol 14, Iss 1, Pp 1-12 (2024)

Abstract We investigate the therapeutic potential of Aloin A and Aloin B, two natural compounds derived from Aloe vera leaves, focusing on their neuroprotective and anticancer properties. The structural differences between these two epimers suggest t

Externí odkaz: https://doaj.org/article/e7a371d732a4411d8c584e6af72d7013

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Akademický článek

Exploring the therapeutic potential of Aloin: unraveling neuroprotective and anticancer mechanisms, and strategies for enhanced stability and delivery.

Autor: Zimbone, Stefania¹ (AUTHOR), Romanucci, Valeria² (AUTHOR), Zarrelli, Armando² (AUTHOR), Giuffrida, Maria Laura¹ (AUTHOR), Sciacca, Michele F. M.¹ (AUTHOR), Lanza, Valeria¹ (AUTHOR), Campagna, Tiziana¹ (AUTHOR), Maugeri, Ludovica³ (AUTHOR), Petralia, Salvatore³ (AUTHOR), Consoli, Grazia Maria Letizia⁴ (AUTHOR), Di Fabio, Giovanni² (AUTHOR), Milardi, Danilo¹ (AUTHOR) danilo.milardi@cnr.it

Publikováno v: Scientific Reports. 7/20/2024, Vol. 14 Issue 1, p1-12. 12p.

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Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Autor: Zimbone, Massimo, Piluso, Nicolo, Litrico, Grazia, Nipoti, Roberta, Reitano, Riccardo, Canino, MariaConcetta, Di Stefano, Maria Ausilia, Lorenti, Simona, La Via, Francesco

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the

Externí odkaz: http://arxiv.org/abs/2104.12467

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Thermal Annealing of High Dose P Implantation in 4H-SiC

Autor: Calabretta, Cristiano, Zimbone, Massimo, Barbagiovanni, Eric G., Boninelli, Simona, Piluso, Nico, Severino, Andrea, Di Stefano, Maria A., Lorenti, Simona, Calcagno, Lucia, La Via, Francesco

Publikováno v: Materials Science Forum ISSN: 1662-9752, Vol. 963, pp 399-402 (2019)

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM

Externí odkaz: http://arxiv.org/abs/2104.08882

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3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

Autor: Zimbone, M., Zielinski, M., Barbagiovanni, E. G., Calabretta, C., La Via, F.

Publikováno v: Journal of Crystal Growth Volume 519, 1 August 2019, Pages 1-6

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In t

Externí odkaz: http://arxiv.org/abs/2001.05817

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Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Autor: Giannazzo, F., Greco, G., Di Franco, S., Fiorenza, P., Deretzis, I., La Magna, A., Bongiorno, C., Zimbone, M., La Via, F., Zielinski, M., Roccaforte, F.

Publikováno v: Adv. Electron. Mater. 2019, 1901171

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However,

Externí odkaz: http://arxiv.org/abs/1912.12326

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