Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Zikang Tong"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 84-92 (2022)
Class E power amplifiers are widely used in high-frequency applications due to their simplicity and use of only one ground-referenced switch. However, Class E power amplifiers are usually tuned to operate at a fixed frequency due to their resonant na
Externí odkaz:
https://doaj.org/article/5c24ac22cac842639776ee52378bce3c
Publikováno v:
IEEE Transactions on Industrial Electronics. 69:5724-5734
The Class Φ2 is a suitable power amplifier (PA) topology for applications that demand low device voltage stress and simple gate driving. The push-pull with T network (PPT) version of this architecture can be advantageous over a conventional single-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a52be7f741da040863342041f0ce11
https://doi.org/10.1109/tie.2021.3090710
https://doi.org/10.1109/tie.2021.3090710
Publikováno v:
IEEE Microwave Magazine. 23:72-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f365ee9d754e3d0952604584fa98df2
https://doi.org/10.1109/mmm.2021.3132111
https://doi.org/10.1109/mmm.2021.3132111
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:4082-4095
The recent development and commercialization of wide bandgap (WBG) power semiconductors, specifically gallium nitride (GaN) and silicon carbide (SiC), have driven the increase in switching frequency for soft-switching power converters, such as the Cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3117897ab978b8e15af3b53243f67d
https://doi.org/10.1109/jestpe.2020.3034345
https://doi.org/10.1109/jestpe.2020.3034345
Publikováno v:
IEEE Transactions on Power Electronics. 35:8472-8489
This article presents various designs of toroidal air-core transformers utilizing a 3-D printing and electroplating fabrication methodology. For certain applications and switching frequency regimes, limitations in core-based magnetics force circuit d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6799e4fb28376746f77623700973a08
https://doi.org/10.1109/tpel.2020.2963976
https://doi.org/10.1109/tpel.2020.2963976
Publikováno v:
IEEE Transactions on Industrial Electronics. 67:1405-1414
This paper presents the design and implementation of a high-frequency/very high frequency (VHF) multiresonant gate drive circuit. The design procedure outlined here is greatly simplified compared with other VHF self-oscillating multiresonant gate dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19282cf58b11dec57b87802a7a7474bc
https://doi.org/10.1109/tie.2019.2899557
https://doi.org/10.1109/tie.2019.2899557
Publikováno v:
IEEE Transactions on Power Electronics. 34:12181-12192
In this paper, we explore the challenges of implementing resonant converters using silicon carbide (SiC) power devices at high frequency: namely, the issue of high parasitic inductance packages and the ability to drive and enhance the mosfet at these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99dc1f6004ef60f528dd7d73181c148
https://doi.org/10.1109/tpel.2019.2904591
https://doi.org/10.1109/tpel.2019.2904591
Publikováno v:
2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::742917bd3b6192ffed3ecab211351e3e
https://doi.org/10.1109/compel52922.2021.9645982
https://doi.org/10.1109/compel52922.2021.9645982
Publikováno v:
2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d46886cfe8c024358798a1e6952be1b
https://doi.org/10.1109/compel52922.2021.9645990
https://doi.org/10.1109/compel52922.2021.9645990
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
For high-frequency dc-to-RF power conversion, the Class Φ2 is a switch-mode power amplifier (PA) topology capable of achieving low device voltage stress while utilizing simple gate driving. The challenge with common switch-mode PA circuits is that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4345689adfe5c455c34c2cd8fdad0f6b
https://doi.org/10.1109/ims19712.2021.9574850
https://doi.org/10.1109/ims19712.2021.9574850