Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zih-Wun Wang"'
Autor:
Zih-Wun Wang, 王姿文
93
Fuse and antifuse devices are important micro-electric devices. Their applications include as memory redundancy, RF circuit trimming, security code, and low-bit-count electric label. Their device structures of fuse devices are mainly metal fu
Fuse and antifuse devices are important micro-electric devices. Their applications include as memory redundancy, RF circuit trimming, security code, and low-bit-count electric label. Their device structures of fuse devices are mainly metal fu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/56375465681547044275
Autor:
Po-Tsung Kao, Zih-Wun Wang, Hui-Jen Lin, Ian Liau, I-Ju Lee, Chen-Sheng Yeh, Wei-Tien Chang, Shao-An Hung
Publikováno v:
Nanomedicine: Nanotechnology, Biology and Medicine. 30:102282
While nitric oxide (NO) can remedy vasoconstriction, inhalation of NO may cause systematic toxicity. We report a goldsome, which comprises a hollowed poly(lactic-co-glycolic acid) (PLGA) polymersome with S-nitrosoglutathione (GSNO, a NO donor) molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::909b794251fdeea7bb4fc9c262c22085
https://doi.org/10.1016/j.nano.2020.102282
https://doi.org/10.1016/j.nano.2020.102282
Publikováno v:
Cell reports. 28(6)
Secreted frizzled-related proteins (SFRPs) are mainly known for their role as extracellular modulators and tumor suppressors that downregulate Wnt signaling. Using the established (CRISPR/Cas9 targeting promoters of SFRPs and targeting SFRPs transcri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77c4ceb9cded717940599a53a3a844c4
https://pubmed.ncbi.nlm.nih.gov/31390565
https://pubmed.ncbi.nlm.nih.gov/31390565
Autor:
Chih-Hsueh Hon, Pai-Chu Kao, Chen-Chia Fan, Wei-Chain Kung, Zih-Wun Wang, Chia-Sung Chiu, Chien-Sheng Hsieh, E.S. Jeng
Publikováno v:
IEEE Transactions on Electron Devices. 51:1811-1817
This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dc5bc82bfb110ebc0ae21af13fcab4
https://doi.org/10.1109/ted.2004.836796
https://doi.org/10.1109/ted.2004.836796
Autor:
Chien-Sheng Hsieh, Pai-Chu Kao, Chia-Sung Chiu, Chih-Hsueh Hon, Chen-Chia Fan, Wei-Chain Kung, Zih-Wun Wang, Jeng, Erik S.
Publikováno v:
IEEE Transactions on Electron Devices; Nov2004, Vol. 51 Issue 11, p1811-1817, 7p