Zobrazeno 1 - 10 of 15 pro vyhledávání: '"Zidong Cai"'
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Akademický článek
Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates
Autor: Zhenghao Chen, Xuelin Yang, Xuan Liu, Jianfei Shen, Zidong Cai, Hongcai Yang, Xingyu Fu, Maojun Wang, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v: Advanced Electronic Materials, Vol 9, Iss 7, Pp n/a-n/a (2023)
Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack‐free GaN layers and high t
Externí odkaz: https://doaj.org/article/f422679bba0846d58ff2b102144fc395
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5
Effect of carbon impurity on the dislocation climb in epitaxial GaN on Si substrates
Autor: Xuelin Yang, Jianfei Shen, Zidong Cai, Zhenghao Chen, Bo Shen
Publikováno v: Applied Physics Express. 15:105501
We investigate the effect of C doping on dislocation behaviors in GaN grown on Si substrates. A moderate C doping can promote dislocation climb and reduce the dislocation density. With further increasing the C concentration, the dislocation density w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::209dc6011f24a6564748374379710f48
https://doi.org/10.35848/1882-0786/ac8d49
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6
Low radio frequency loss and buffer-free GaN directly on physical-vapor-deposition AlN/Si templates
Autor: Danshuo Liu, Xuelin Yang, Xing Zhang, Zidong Cai, Zhenghao Chen, Cheng Ma, Hongcai Yang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v: Applied Physics Express. 15:081001
We demonstrate 1.5 μm thick buffer-free GaN layers directly on physical vapor deposited (PVD) AlN/Si templates via delayed coalescence growth. The full width of half maximum of the X-ray diffraction rocking curves for GaN (002)/(102) planes are 525/
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8de7897b59cf17ada6af9b5ce9bc106
https://doi.org/10.35848/1882-0786/ac7ddb
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7
Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates
Autor: Fujun Xu, Xinqiang Wang, Lai Wei, Weikun Ge, Maojun Wang, Jie Zhang, Danshuo Liu, Jianfei Shen, Shan Wu, Yuxia Feng, Bo Shen, Zidong Cai, Xuelin Yang, Yue Li
Publikováno v: Physical Review Materials. 4
The incorporation of point defects into semiconductors could substantially tailor their optical and electrical properties as well as the spin-based quantum properties. In terms of structural properties, however, efforts have seldom been devoted to th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d13414058306826c33042808f42bf9a
https://doi.org/10.1103/physrevmaterials.4.073402
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9
A resonance Rayleigh scattering method for sensitive detection of chitosan based on supramolecular complex and mechanism study
Autor: Meiying, Song, Yating, Wang, Tingnan, Xiao, Zidong, Cai, Weiling, Zou, Jincan, He, Zhengquan, Su, Yan, Bai
Publikováno v: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 270:120797
A convenient and sensitive resonance Rayleigh scattering (RRS) method for the detection of chitosan (CTS) has been developed via forming Cu-Zn supramolecular complex by complexation reaction, hydrophobic force and electrostatic attraction. The micros
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ce0c40f0d782ce6833dbcef7461814f
https://doi.org/10.1016/j.saa.2021.120797
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10
Low RF loss and low dislocation density of GaN grown on high-resistivity Si substrates
Autor: Cheng Ma, Xuelin Yang, Jianfei Shen, Danshuo Liu, Zidong Cai, Zhenghao Chen, Jun Tang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v: Applied Physics Express. 15:031003
The conductive channel induced by aluminum (Al) diffusion into high-resistivity Si substrates is one of the main contributors to RF loss of GaN-on-Si RF devices. However, it has been unclear how and when the Al diffuses into the substrates. Here, we
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37900b219fa35b49f87015243a28ff29
https://doi.org/10.35848/1882-0786/ac5260
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