Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ziad el Otell"'
Autor:
R. Chanson, Jean-Francois de Marneffe, Kikuchi Yuki, Nozawa Syuji, Khashayar Babaei-Gavan, J.F Zhang, Askar Rezvanov, Ziad el Otell, Tatsuya Yamaguchi, Kaoru Maekawa, Fujikawa Makoto
Publikováno v:
ACS Applied Electronic Materials. 1:2602-2611
Nanoporous materials show a large surface area and co-continuous topology, leading to a high sensitivity to chemically active components over macroscopic length scales. The processing of nanoporous systems can be complex, causing modifications of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4e0a4a528984fac30a519ce5e2d5af
https://doi.org/10.1021/acsaelm.9b00589
https://doi.org/10.1021/acsaelm.9b00589
The Influence of H2Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition
Autor:
Efrain Altamirano-Sanchez, Peter De Schepper, Stefan De Gendt, Alessandro Vaglio Pret, Ziad el Otell
Publikováno v:
Plasma Processes and Polymers. 12:624-641
To meet the demands for sub-20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra-large scale integrated circuit manufacturing. Post-lithography treatments should reduce the LWR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bf1ef5ac0d1111c96f98b78132d762c
https://doi.org/10.1002/ppap.201400157
https://doi.org/10.1002/ppap.201400157
Autor:
Ziad el Otell, Yiting Sun, Liping Zhang, Mikhail R. Baklanov, Felim Vajda, Markus Heyne, A I Zotovich, Sergej Naumov, Jean-Francois de Marneffe, Stefan De Gendt
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N3098-N3107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d714804779ca1146cb7d7181d4a435
https://doi.org/10.1149/2.0121501jss
https://doi.org/10.1149/2.0121501jss
Autor:
Alessandro Vaglio Pret, Efrain Altamirano-Sanchez, Ziad el Otell, Stefan De Gendt, Terje Hansen, Peter De Schepper
Publikováno v:
Plasma Processes and Polymers. 12:153-161
As the semiconductor industry pursues Moore's law, the demand to obtain smaller features continues. Extreme ultraviolet (EUV) lithography remains one of the primary options for sub-20 nm patterns. However, the technology struggles to meet the line wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d4ee2d853188648469f0c1f04abfc6
https://doi.org/10.1002/ppap.201400078
https://doi.org/10.1002/ppap.201400078
Autor:
Dominik Treiblmayr, Barbara Schamberger, Mathias Holz, Alexander Reum, Jean-Francois de Marneffe, Thomas Glinsner, Ahmad Ahmad, Martin Eibelhuber, Ziad el Otell, Martin Hofmann, Yana Krivoshapkina, Boon Teik Chan, Tzvetan Ivanov, Steve Lenk, Claudia Lenk, Mustapha Chouiki, Ivo W. Rangelow
Publikováno v:
Journal of Vacuum Science & Technology B. 37:021603
Next generation electronic devices like single electron transistors (SETs) operating at room temperature (RT) demand for high-resolution patterning techniques and simultaneously cost-effective, high-throughput manufacturing. Thereby, field-emission s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58ff50cf7ebb5bffd916e2f9c1f788e
https://doi.org/10.1116/1.5067269
https://doi.org/10.1116/1.5067269
Autor:
Jan Willem Maes, Werner Knaepen, Ziad el Otell, Safak Sayan, Roel Gronheid, Arjun Singh, Boon Teik Chan
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Numerous block copolymer (BCP) systems can be used in directed self-assembly (DSA) processes to form patterns useful in lithography, especially lines and spaces with lamellar phase systems and vias/pillars with cylindrical phase systems. However, mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34a0c83e06f684f9b5dbd15f501f86b
https://doi.org/10.1117/12.2086091
https://doi.org/10.1117/12.2086091
Autor:
Jean-Francois de Marneffe, Hans-Werner Schmidt, Marcus Kaestner, Yana Krivoshapkina, Andreas Erich Schedl, Urs Dürig, Vincent Fokkema, Tristan Kolb, Peter Strohriegl, Ziad el Otell, Mike Cooke, Colin Rawlings, Marijn G. A. van Veghel, Andreas Ringk, Ivo W. Rangelow, Christian Neuber, Armin W. Knoll, Matthias Budden
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
In the presented work solvent-free film preparation from tailored molecular glass resists, their thermal analysis, the characterization of etch resistance for plasma etching transfer processes, and the evaluation of the patterning performance using s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::106badb59925ae1b91159b6e16e94247
https://doi.org/10.1117/12.2085734
https://doi.org/10.1117/12.2085734
Autor:
Leander Hansel, Ziad el Otell, Jean-Francois de Marneffe, Tristan Kolb, Andreas Ringk, Christian Neuber
Publikováno v:
SPIE Proceedings.
The performance of novel molecular glass resists is demonstrated in this work for the purposes of performing nano-pattern transfer. In order to improve the etch durability, post apply bake (PAB) and mixing two resists platforms were investigated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa059200eb591c2b61e56cad27dcf35
https://doi.org/10.1117/12.2085828
https://doi.org/10.1117/12.2085828
Autor:
Peter De Schepper, Efrain Altamirano-Sanchez, Terje Hansen, Ziad el Otell, Alessandro Vaglio Pret, Werner Boulart, Stefan De Gendt
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:023006
Smoothing effects of postlithography plasma treatments on 22-nm lines and spaces are evaluated for two types of extreme ultraviolet photoresists, using five different plasma processes (Ar, H2/Ar, HBr, H2/N2, and H2). Experimental results indicate a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3410dc82e0ae03a3b8efede28b55d790
https://doi.org/10.1117/1.jmm.13.2.023006
https://doi.org/10.1117/1.jmm.13.2.023006