Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Zi-Zhao Gan"'
Autor:
Chen Zhang, Da Wang, Zheng-Hao Liu, Yan Zhang, Ping Ma, Qing-Rong Feng, Yue Wang, Zi-Zhao Gan
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027139-027139-8 (2015)
High quality superconducting nanowires were fabricated from ultrathin MgB2 films by a focused ion beam milling technique. The precursor MgB2 films in 10 nm thick were grown on MgO substrates by using a hybrid physical-chemical vapor deposition method
Externí odkaz:
https://doaj.org/article/f7f54636e0454465a9423f330cfb59c4
Autor:
C. Reinhoffer, P. Pilch, A. Reinold, P. Derendorf, S. Kovalev, J.-C. Deinert, I. Ilyakov, A. Ponomaryov, Min Chen, Tie-Quan Xu, Yue Wang, Zi-Zhao Gan, De-Sheng Wu, Jian-Lin Luo, S. Germanskiy, E. A. Mashkovich, P. H. M. van Loosdrecht, I. M. Eremin, Zhe Wang
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80014c2de07258eec5e351f21b845595
https://doi.org/10.1103/physrevb.106.214514
https://doi.org/10.1103/physrevb.106.214514
Autor:
Yu-Long Li, Tie-Quan Xu, Hong-Zhang Wang, Ke-Huan Linghu, Zi-Geng Huang, Rui-Juan Nie, Yue Wang, Fu-Ren Wang, Zi-Zhao Gan
Publikováno v:
Physica C: Superconductivity and its Applications. 604:1354178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535bb633585fed5c2b5e0fa1e1522e9d
https://doi.org/10.1016/j.physc.2022.1354178
https://doi.org/10.1016/j.physc.2022.1354178
Autor:
Xiao-Yue Jin1,2 jin@physik.uni-erlangen.de, Zi--Zhao Gan1
Publikováno v:
European Physical Journal B: Condensed Matter. Feb2004, Vol. 37 Issue 4, p489-498. 10p. 2 Graphs.
Publikováno v:
Materials Science Forum. :203-207
Niobium with the transition temperature of 9 K is the usual material for TESLA superconducting accelerate cavity. The cavity must work at the temperature range of of 2~1.8 K, which would consume large energy. In addition, the low upper critical field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4d030555b20c8c23fc9ec0120f3fd4f
https://doi.org/10.4028/www.scientific.net/msf.745-746.203
https://doi.org/10.4028/www.scientific.net/msf.745-746.203
Autor:
Wen-de Liu, Zi-zhao Gan
Publikováno v:
physica status solidi (a). 206:1641-1646
Ray-tracing method is used to investigate the light extraction efficiency (LEE) of Bragg diffraction-assisted GaN-based light-emitting diodes (LED's) with vertical sidewalls. The ray tracing is based on the analytical formulae of the LEE in the incoh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c88bb415aeff5b18b4e59ab690599c
https://doi.org/10.1002/pssa.200824494
https://doi.org/10.1002/pssa.200824494
Autor:
Cheng Gang Zhuang, Li Ping Chen, Chin Ping Chen, Li Li Ding, Fen Li, Kai Cheng Zhang, Qing Rong Feng, Zi Zhao Gan
Publikováno v:
Materials Science Forum. :2047-2050
Superconducting MgB2 films have been fabricated on sapphire substrate by the method of hybrid physical-chemical vapor deposition (HPCVD). The film thickness ranges from 75 nm to 3 μm. The investigation on the physical properties, such as the transit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e008850d8e39ba01880d9dc1d3bd65
https://doi.org/10.4028/www.scientific.net/msf.546-549.2047
https://doi.org/10.4028/www.scientific.net/msf.546-549.2047
Autor:
Z. J. Yang, Zhang Zhensheng, G. Y. Zhang, Xiao Min Ding, Dapeng Yu, Bei Zhang, Jun Xu, Yu Zhen Tong, Zhi Zhong Chen, Xiaodong Hu, Zi Zhao Gan, Yan Bo Jin, Qian Ren, Zhi Xin Qin
Publikováno v:
physica status solidi (c). :2300-2303
The study of focused Ga ion beam milling for making GaN-based cavity mirrors is presented. The FIB etching rate of GaN was found to be in the rang of 0.6 μm3/nC – 0.43 μm3/nC. Three kinds of mirrors including polishing mirror, tilt mirror and nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d66b558a1da55f1c4bc45e5e0a99e4b
https://doi.org/10.1002/pssc.200303482
https://doi.org/10.1002/pssc.200303482
Autor:
Jun-jie Shi, Zi-zhao Gan
Publikováno v:
Journal of Applied Physics. 94:407-415
Exciton states confined in wurtzite InxGa1−xN/GaN strained quantum dots (QDs) are investigated within the framework of effective-mass approximation and variational approach, including three-dimensional confinement of the electrons and holes in QDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee03d708dcd9306e77ff170772b9275
https://doi.org/10.1063/1.1576490
https://doi.org/10.1063/1.1576490
Autor:
Bei Zhang, Kui Bao, Xiang Ning Kang, Dong Sheng Xu, Wen Zhu Zhao, Tao Dai, Zi Zhao Gan, G. Y. Zhang
Publikováno v:
IEEE Photonics Technology Letters. 20:1974-1976
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by forming surface nano-structures using an anodic aluminum oxide (AAO) template as a dry etching mask. Nano-pores were simultaneously formed on indium ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee657fe4411130c00df1b0e62c9081f8
https://doi.org/10.1109/lpt.2008.2005645
https://doi.org/10.1109/lpt.2008.2005645