Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Zi-You Huang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1076-1081 (2020)
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thickness
Externí odkaz:
https://doaj.org/article/80713727c59f43a390a574c4290efa27
Autor:
Zi-You Huang, 黃子祐
90
After Taiwan government relieved foreign investors restricts on investing directly domestic stock market in 1991, the proportion of institutional investors on the Taiwan stock market are getting gradually increasing. This thesis tends to inve
After Taiwan government relieved foreign investors restricts on investing directly domestic stock market in 1991, the proportion of institutional investors on the Taiwan stock market are getting gradually increasing. This thesis tends to inve
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/23439997846896249729
Autor:
Po-Hsuan Yen, Chung-Shin Yuan, Chia-Wei Lee, Jun-Hao Ceng, Zi-You Huang, Kuan-Chen Chiang, I-Chieh Du, Yu-Lun Tseng, Ker-Yea Soong, Ming-Shiou Jeng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a470d0539d389e5b93e257f6e85c16d0
https://doi.org/10.2139/ssrn.4371950
https://doi.org/10.2139/ssrn.4371950
Publikováno v:
IEEE Journal of the Electron Devices Society. 8:1076-1081
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95702ddc49f09206433437fbb2ca1331
https://doi.org/10.1109/jeds.2020.3029268
https://doi.org/10.1109/jeds.2020.3029268
Autor:
Chun-Hu Cheng, Shih An Wang, Yu Chi Fan, Zhi Wei Zheng, Tsung Ming Lee, Hsiu Ming Liu, Chien Liang Lin, Sheng Lee, Wei-Dong Liu, Hsiao-Hsuan Hsu, Zi You Huang
Publikováno v:
Thin Solid Films. 701:137927
To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e572a396048fcb804483a9e6f066a7
https://doi.org/10.1016/j.tsf.2020.137927
https://doi.org/10.1016/j.tsf.2020.137927
Autor:
Chun-Hu Cheng, Wei Chun Wang, Chien Liu, Tsung Ming Lee, Hsiao-Hsuan Hsu, Szu Yen Hsiung, Hsiu Ming Liu, Zhong Ying Huang, Shih An Wang, Yu Chi Fan, Sheng Lee, Wu-Ching Chou, Bing Yang Shih, Zi You Huang, Yi Chun Tung, Hsuan Han Chen, Chien Liang Lin
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGA01
In this work, we demonstrated that the 5-nm-thick HfAlO x negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec−1 subthreshold swing (SS), an ultralow I off of 7.44 fA μm−1, and a high I on /I off ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ad40c2c6150ef126a7c4c0b9087b77
https://doi.org/10.7567/1347-4065/ab6420
https://doi.org/10.7567/1347-4065/ab6420
Autor:
Chien Liu, Hsuan-Han Chen, Yi-Chun Tung, Wei-Chun Wang, Zhong-Ying Huang, Bing-Yang Shih, Szu-Yen Hsiung, Shih-An Wang, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Zi-You Huang, Hsiu-Ming Liu, Sheng Lee, Wu-Ching Chou, Chun-Hu Cheng, Hsiao-Hsuan Hsu
Publikováno v:
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p