Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Zi-Xin Ding"'
Publikováno v:
Crystals, Vol 10, Iss 4, p 292 (2020)
The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions
Externí odkaz:
https://doaj.org/article/01f2f5be6500423ea755352462f6e752
Publikováno v:
Journal of Electronic Materials. 49:6798-6805
A GaN-based metal–semiconductor–metal varactor with a two-dimensional electron gas (2DEG) layer is proposed and fabricated. The capacitance variation of this fabricated varactor biased at different external voltages is studied and measured, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b090aaa28f561343c0a9eb1049f3caf5
https://doi.org/10.1007/s11664-020-08110-0
https://doi.org/10.1007/s11664-020-08110-0
Autor:
Liann-Be Chang, Hao-Zong Lo, Zi-Xin Ding, Hung-Tsung Wang, Yuan-Po Chiang, Chien-Fu Shih, Yu-Li Hsieh, Chia-Ning Chang, Chung-Yi Li, Ming-Jer Jeng
Publikováno v:
Materials, Vol 13, Iss 4956, p 4956 (2020)
Materials
Volume 13
Issue 21
Materials
Volume 13
Issue 21
Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection modu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d72a95c87a26bfa14989f073905183f
https://doi.org/10.3390/ma13214956
https://doi.org/10.3390/ma13214956
Publikováno v:
Crystals, Vol 10, Iss 292, p 292 (2020)
Crystals
Volume 10
Issue 4
Crystals
Volume 10
Issue 4
The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d212101961b7149e92bb58f43b1d130
https://doi.org/10.3390/cryst10040292
https://doi.org/10.3390/cryst10040292