Zobrazeno 1 - 10
of 291
pro vyhledávání: '"Zi-Hui Zhang"'
Autor:
Ying Wang, Bing-Shu Li, Zi-Hui Zhang, Zhi Wang, Yu-Ting Wan, Fu-Wen Wu, Jing-Chun Liu, Jia-Xin Peng, Hao-Yu Wang, Li Hong
Publikováno v:
Biomedicine & Pharmacotherapy, Vol 165, Iss , Pp 115277- (2023)
Paeonol (PAE) is a natural phenolic monomer isolated from the root bark of Paeonia suffruticosa that has been widely used in the clinical treatment of some inflammatory-related diseases and cardiovascular diseases. Much preclinical evidence has demon
Externí odkaz:
https://doaj.org/article/447349fbbc834d27b5b65e2c257201b7
Autor:
Zi-Hui Zhang, Jing-Hao Jin, Gui-Lin Sheng, Yu-Ping Xing, Wang Liu, Xue Zhou, Yi-Qing Liu, Xiao-Ren Chen
Publikováno v:
Molecular Plant-Microbe Interactions, Vol 34, Iss 8, Pp 891-903 (2021)
Small cysteine-rich (SCR) proteins, including fungal avirulence proteins, play important roles in pathogen–plant interactions. SCR protein-encoding genes have been discovered in the genomes of Phytophthora pathogens but their functions during patho
Externí odkaz:
https://doaj.org/article/5b6a16c2025d4012be3d03eb0aa9a167
Publikováno v:
Micromachines, Vol 14, Iss 5, p 991 (2023)
GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced c
Externí odkaz:
https://doaj.org/article/f3e0c0a3bc6e4f12b5a221474cab95c6
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-7 (2021)
Tuning the plasmonic resonance peak to the deep ultraviolet (DUV) band is critical for plasmonic-enhanced AlGaN-based DUV photodetector. However,the high refractive index of AlGaN layer seriously limits the plasmonic resonance peak in DUV band. There
Externí odkaz:
https://doaj.org/article/b954e736c23c420e9a2947d1f12a1be3
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-5 (2021)
We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges i
Externí odkaz:
https://doaj.org/article/c39770c2963445e58a992a149acea05b
Autor:
Le Chang, Yen-Wei Yeh, Sheng Hang, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang, Zhaojun Liu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-9 (2020)
Abstract Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be corre
Externí odkaz:
https://doaj.org/article/93eb8fbadef7437298971b8b8fcbcf15
Autor:
Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-7 (2020)
In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. T
Externí odkaz:
https://doaj.org/article/5146774df45c4eae98fb8d0f98ad9883
Autor:
Jianquan Kou, KangKai Tian, Chunshuang Chu, Yonghui Zhang, Xingye Zhou, Zhihong Feng, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-18 (2019)
Abstract In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD). According to our results, the breakd
Externí odkaz:
https://doaj.org/article/21014fb7ffa04fc1a5cb2920b286743a
Autor:
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-16 (2019)
Abstract In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a
Externí odkaz:
https://doaj.org/article/8e3156899e5449d19ac3334f303ce536
Autor:
Yuxin Zheng, Yonghui Zhang, Ji Zhang, Ce Sun, Chunshuang Chu, Kangkai Tian, Zi-Hui Zhang, Wengang Bi
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Abstract In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed
Externí odkaz:
https://doaj.org/article/9b470f616b774d698251751784779a5a